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BC807-40W
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Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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BC807-40W
Nexperia · Bipolar (BJT) · SOT-323
BC807-40W from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the datasheet gives a peak base current limit IBM of -200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C). |
| 2 | E | passive | Emitter terminal of the PNP transistor; the datasheet gives an emitter-base voltage limit VEBO of -5 V (open collector, Tamb = 25 °C). |
| 3 | C | passive | Collector terminal of the PNP transistor; the datasheet gives a collector current limit IC of -500 mA and a collector-emitter voltage limit VCEO of -45 V (open base, Tamb = 25 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base breakdown voltage | V(BR)CBO | -50 | V | IC = -100 µA; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-emitter breakdown voltage | V(BR)CEO | -45 | V | IC = -10 mA; IE = 0 A; Tamb = 25 °C | 5 | ||
| emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE = -100 µA; IC = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -20 V; IE = 0 A; Tamb = 25 °C | 5 | ||
| collector-base cut-off current | ICBO | -5 | μA | VCB = -20 V; IE = 0 A; Tj = 150 °C | 5 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 5 | ||
| DC current gain (BC807-40W selection) | hFE | 250 | 600 | VCE = -1 V; IC = -100 mA; Tamb = 25 °C; pulsed | 5 | ||
| DC current gain | hFE | 40 | VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed | 5 | |||
| collector-emitter saturation voltage | VCEsat | -700 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C; pulsed | 5 | ||
| base-emitter voltage | VBE | -1.2 | V | VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed | 5 | ||
| transition frequency | fT | 80 | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 5 | ||
| collector-emitter voltage | VCBO | -50 | V | open emitter; Tamb = 25 °C | 3 | ||
| collector-emitter voltage | VCEO | -45 | V | open base; Tamb = 25 °C | 3 | ||
| emitter-base voltage | VEBO | -5 | V | open collector; Tamb = 25 °C | 3 | ||
| collector current | IC | -500 | mA | Tamb = 25 °C | 3 | ||
| peak collector current | ICM | -1 | A | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| peak base current | IBM | -200 | mA | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 | ||
| total power dissipation | Ptot | 200 | mW | Tamb ≤ 25 °C | 3 | ||
| total power dissipation | Ptot | 290 | mW | Device mounted on an FR4 PCB; single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 3 | ||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -65 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 625 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 | ||
| thermal resistance from junction to ambient | Rth(j-a) | 431 | K/W | FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 |
CAD (KiCad official)
- Symbol:
BC807-40W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
bc807-40w-etched.step/bc807-40w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc807-40w.step/bc807-40w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
ca28e5536df5e856, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC807-40W
**Nexperia** · Bipolar (BJT) · SOT-323
BC807-40W from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the PNP transistor; the datasheet gives a peak base current limit IBM of -200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C). |
| 2 | E | passive | Emitter terminal of the PNP transistor; the datasheet gives an emitter-base voltage limit VEBO of -5 V (open collector, Tamb = 25 °C). |
| 3 | C | passive | Collector terminal of the PNP transistor; the datasheet gives a collector current limit IC of -500 mA and a collector-emitter voltage limit VCEO of -45 V (open base, Tamb = 25 °C). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base breakdown voltage | V(BR)CBO | -50 | | | V | IC = -100 µA; IE = 0 A; Tamb = 25 °C | 5 |
| collector-emitter breakdown voltage | V(BR)CEO | -45 | | | V | IC = -10 mA; IE = 0 A; Tamb = 25 °C | 5 |
| emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE = -100 µA; IC = 0 A; Tamb = 25 °C | 5 |
| collector-base cut-off current | ICBO | | | -100 | nA | VCB = -20 V; IE = 0 A; Tamb = 25 °C | 5 |
| collector-base cut-off current | ICBO | | | -5 | μA | VCB = -20 V; IE = 0 A; Tj = 150 °C | 5 |
| emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 5 |
| DC current gain (BC807-40W selection) | hFE | 250 | | 600 | | VCE = -1 V; IC = -100 mA; Tamb = 25 °C; pulsed | 5 |
| DC current gain | hFE | 40 | | | | VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed | 5 |
| collector-emitter saturation voltage | VCEsat | | | -700 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C; pulsed | 5 |
| base-emitter voltage | VBE | | | -1.2 | V | VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed | 5 |
| transition frequency | fT | 80 | | | MHz | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C | 5 |
| collector-emitter voltage | VCBO | | | -50 | V | open emitter; Tamb = 25 °C | 3 |
| collector-emitter voltage | VCEO | | | -45 | V | open base; Tamb = 25 °C | 3 |
| emitter-base voltage | VEBO | | | -5 | V | open collector; Tamb = 25 °C | 3 |
| collector current | IC | | | -500 | mA | Tamb = 25 °C | 3 |
| peak collector current | ICM | | | -1 | A | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 |
| peak base current | IBM | | | -200 | mA | single pulse; tp ≤ 1 ms; Tamb = 25 °C | 3 |
| total power dissipation | Ptot | | | 200 | mW | Tamb ≤ 25 °C | 3 |
| total power dissipation | Ptot | | | 290 | mW | Device mounted on an FR4 PCB; single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 3 |
| junction temperature | Tj | | | 150 | °C | | 3 |
| ambient temperature | Tamb | -65 | | 150 | °C | | 3 |
| storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 625 | K/W | in free air; FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 |
| thermal resistance from junction to ambient | Rth(j-a) | | | 431 | K/W | FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 |
## CAD (KiCad official)
- Symbol: `BC807-40W`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `bc807-40w-etched.step` / `bc807-40w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc807-40w.step` / `bc807-40w.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881293870710785) (13 pp, sha256 `ca28e5536df5e856`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc807-40w-datasheet.pdf)