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BC807-40W

Public Made by Adom

by adom

Nexperia Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs bc807-40w: factory component page (tier=lcsc) · Ray 2h ago
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BC807-40W

Nexperia · Bipolar (BJT) · SOT-323

BC807-40W from Nexperia, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; the datasheet gives a peak base current limit IBM of -200 mA (single pulse, tp ≤ 1 ms, Tamb = 25 °C).
2 E passive Emitter terminal of the PNP transistor; the datasheet gives an emitter-base voltage limit VEBO of -5 V (open collector, Tamb = 25 °C).
3 C passive Collector terminal of the PNP transistor; the datasheet gives a collector current limit IC of -500 mA and a collector-emitter voltage limit VCEO of -45 V (open base, Tamb = 25 °C).

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
collector-base breakdown voltage V(BR)CBO -50 V IC = -100 µA; IE = 0 A; Tamb = 25 °C 5
collector-emitter breakdown voltage V(BR)CEO -45 V IC = -10 mA; IE = 0 A; Tamb = 25 °C 5
emitter-base breakdown voltage V(BR)EBO -5 V IE = -100 µA; IC = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO -100 nA VCB = -20 V; IE = 0 A; Tamb = 25 °C 5
collector-base cut-off current ICBO -5 μA VCB = -20 V; IE = 0 A; Tj = 150 °C 5
emitter-base cut-off current IEBO -100 nA VEB = -5 V; IC = 0 A; Tamb = 25 °C 5
DC current gain (BC807-40W selection) hFE 250 600 VCE = -1 V; IC = -100 mA; Tamb = 25 °C; pulsed 5
DC current gain hFE 40 VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed 5
collector-emitter saturation voltage VCEsat -700 mV IC = -500 mA; IB = -50 mA; Tamb = 25 °C; pulsed 5
base-emitter voltage VBE -1.2 V VCE = -1 V; IC = -500 mA; Tamb = 25 °C; pulsed 5
transition frequency fT 80 MHz VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 °C 5
collector-emitter voltage VCBO -50 V open emitter; Tamb = 25 °C 3
collector-emitter voltage VCEO -45 V open base; Tamb = 25 °C 3
emitter-base voltage VEBO -5 V open collector; Tamb = 25 °C 3
collector current IC -500 mA Tamb = 25 °C 3
peak collector current ICM -1 A single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
peak base current IBM -200 mA single pulse; tp ≤ 1 ms; Tamb = 25 °C 3
total power dissipation Ptot 200 mW Tamb ≤ 25 °C 3
total power dissipation Ptot 290 mW Device mounted on an FR4 PCB; single-sided copper, tin-plated; mounting pad for collector 1 cm2 3
junction temperature Tj 150 °C 3
ambient temperature Tamb -65 150 °C 3
storage temperature Tstg -65 150 °C 3
thermal resistance from junction to ambient Rth(j-a) 625 K/W in free air; FR4 PCB, single-sided copper, tin-plated and standard footprint 4
thermal resistance from junction to ambient Rth(j-a) 431 K/W FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 4

CAD (KiCad official)

  • Symbol: BC807-40W
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: bc807-40w-etched.step / bc807-40w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-40w.step / bc807-40w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (13 pp, sha256 ca28e5536df5e856, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF