component
BC640
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
BC640
Changjing · Bipolar (BJT) · TO-92
BC640 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet limits emitter-base voltage to -5 V and continuous collector current to -1 A. |
| 2 | COLLECTOR | passive | Collector terminal of the PNP transistor; for the BC640 the datasheet limits collector-emitter voltage to -80 V and collector-base voltage to -100 V. |
| 3 | BASE | passive | Base terminal of the PNP transistor; the datasheet specifies VCE(sat) of -0.5 V at IC = -500 mA with IB = -50 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (BC640) | VCEO | -80 | V | Ta=25℃ | 1 | ||
| Collector-base voltage (BC640) | VCBO | -100 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | -5 | V | Ta=25℃ | 1 | ||
| Collector current, continuous | IC | -1 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 0.83 | W | Ta=25℃ | 1 | ||
| Operating junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance, junction to ambient | RӨJA | 150 | ℃/W | 1 | |||
| Collector-base breakdown voltage (BC640) | V(BR)CBO | -100 | V | IC=-100μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage (BC640) | V(BR)CEO | -80 | V | IC=-1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | -0.1 | μA | VCB=-30V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | -0.1 | μA | VEB=-5V, IC=0 | 2 | ||
| DC current gain hFE(1) | hFE(1) | 40 | VCE=-2V, IC=-5mA | 2 | |||
| DC current gain hFE(2) | hFE(2) | 63 | 250 | VCE=-2V, IC=-150mA | 2 | ||
| DC current gain hFE(3) | hFE(3) | 25 | VCE=-2V, IC=-500mA | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.5 | V | IC=-500mA, IB=-50mA | 2 | ||
| Base-emitter voltage | VBE | -1 | V | VCE=-2V, IC=-500mA | 2 | ||
| Transition frequency | fT | 100 | MHz | VCE=-5V, IC=-50mA, f=100MHz | 2 |
CAD (KiCad official)
- Symbol:
BC640 - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files:
bc640-etched.step/bc640-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc640.step/bc640.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
e9614c71cd5ead0d, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# BC640
**Changjing** · Bipolar (BJT) · TO-92
BC640 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the PNP transistor; the datasheet limits emitter-base voltage to -5 V and continuous collector current to -1 A. |
| 2 | COLLECTOR | passive | Collector terminal of the PNP transistor; for the BC640 the datasheet limits collector-emitter voltage to -80 V and collector-base voltage to -100 V. |
| 3 | BASE | passive | Base terminal of the PNP transistor; the datasheet specifies VCE(sat) of -0.5 V at IC = -500 mA with IB = -50 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (BC640) | VCEO | | | -80 | V | Ta=25℃ | 1 |
| Collector-base voltage (BC640) | VCBO | | | -100 | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO | | | -5 | V | Ta=25℃ | 1 |
| Collector current, continuous | IC | | | -1 | A | Ta=25℃ | 1 |
| Collector power dissipation | PC | | | 0.83 | W | Ta=25℃ | 1 |
| Operating junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Thermal resistance, junction to ambient | RӨJA | | | 150 | ℃/W | | 1 |
| Collector-base breakdown voltage (BC640) | V(BR)CBO | -100 | | | V | IC=-100μA, IE=0 | 2 |
| Collector-emitter breakdown voltage (BC640) | V(BR)CEO | -80 | | | V | IC=-1mA, IB=0 | 2 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IE=-100μA, IC=0 | 2 |
| Collector cut-off current | ICBO | | | -0.1 | μA | VCB=-30V, IE=0 | 2 |
| Emitter cut-off current | IEBO | | | -0.1 | μA | VEB=-5V, IC=0 | 2 |
| DC current gain hFE(1) | hFE(1) | 40 | | | | VCE=-2V, IC=-5mA | 2 |
| DC current gain hFE(2) | hFE(2) | 63 | | 250 | | VCE=-2V, IC=-150mA | 2 |
| DC current gain hFE(3) | hFE(3) | 25 | | | | VCE=-2V, IC=-500mA | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | -0.5 | V | IC=-500mA, IB=-50mA | 2 |
| Base-emitter voltage | VBE | | | -1 | V | VCE=-2V, IC=-500mA | 2 |
| Transition frequency | fT | 100 | | | MHz | VCE=-5V, IC=-50mA, f=100MHz | 2 |
## CAD (KiCad official)
- Symbol: `BC640`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `bc640-etched.step` / `bc640-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bc640.step` / `bc640.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590229271210848256) (4 pp, sha256 `e9614c71cd5ead0d`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/bc640-datasheet.pdf)