component

BC640

Public Made by Adom

by adom

Changjing Bipolar (BJT), TO-92. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC640

Changjing · Bipolar (BJT) · TO-92

BC640 from Changjing, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 EMITTER passive Emitter terminal of the PNP transistor; the datasheet limits emitter-base voltage to -5 V and continuous collector current to -1 A.
2 COLLECTOR passive Collector terminal of the PNP transistor; for the BC640 the datasheet limits collector-emitter voltage to -80 V and collector-base voltage to -100 V.
3 BASE passive Base terminal of the PNP transistor; the datasheet specifies VCE(sat) of -0.5 V at IC = -500 mA with IB = -50 mA.

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (BC640) VCEO -80 V Ta=25℃ 1
Collector-base voltage (BC640) VCBO -100 V Ta=25℃ 1
Emitter-base voltage VEBO -5 V Ta=25℃ 1
Collector current, continuous IC -1 A Ta=25℃ 1
Collector power dissipation PC 0.83 W Ta=25℃ 1
Operating junction and storage temperature range TJ,Tstg -55 150 ℃ 1
Thermal resistance, junction to ambient RӨJA 150 ℃/W 1
Collector-base breakdown voltage (BC640) V(BR)CBO -100 V IC=-100μA, IE=0 2
Collector-emitter breakdown voltage (BC640) V(BR)CEO -80 V IC=-1mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100μA, IC=0 2
Collector cut-off current ICBO -0.1 μA VCB=-30V, IE=0 2
Emitter cut-off current IEBO -0.1 μA VEB=-5V, IC=0 2
DC current gain hFE(1) hFE(1) 40 VCE=-2V, IC=-5mA 2
DC current gain hFE(2) hFE(2) 63 250 VCE=-2V, IC=-150mA 2
DC current gain hFE(3) hFE(3) 25 VCE=-2V, IC=-500mA 2
Collector-emitter saturation voltage VCE(sat) -0.5 V IC=-500mA, IB=-50mA 2
Base-emitter voltage VBE -1 V VCE=-2V, IC=-500mA 2
Transition frequency fT 100 MHz VCE=-5V, IC=-50mA, f=100MHz 2

CAD (KiCad official)

  • Symbol: BC640
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: bc640-etched.step / bc640-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc640.step / bc640.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (4 pp, sha256 e9614c71cd5ead0d, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF