# BAS316Z

**Nexperia** · Switching Diodes · SOD-323

BAS316Z from Nexperia, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the diode; the graphic symbol marks K as the cathode, and the cathode tab is the soldering point referenced for the 400 mW Ptot rating (Tsp ≤ 90 °C). |
| 2 | A | passive | Anode of the diode, the opposite terminal to the cathode (K) in the graphic symbol. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | SOD-323 |
| Category | Diodes |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM |  |  | 100 | V |  | 3 |
| Reverse voltage | VR |  |  | 100 | V |  | 3 |
| Forward current | IF |  |  | 250 | mA | Tj = 25 °C | 3 |
| Non-repetitive peak forward current | IFSM |  |  | 4 | A | tp = 1 µs; square wave; Tj(init) = 25 °C | 3 |
| Non-repetitive peak forward current | IFSM |  |  | 1 | A | tp = 1 ms; square wave; Tj(init) = 25 °C | 3 |
| Non-repetitive peak forward current | IFSM |  |  | 0.5 | A | tp = 1 s; square wave; Tj(init) = 25 °C | 3 |
| Repetitive peak forward current | IFRM |  |  | 500 | mA | tp ≤ 0.5 ms; δ = 0.25 | 3 |
| Total power dissipation | Ptot |  |  | 400 | mW | Tsp ≤ 90 °C [1][2] | 3 |
| Junction temperature | Tj |  |  | 150 | °C |  | 3 |
| Ambient temperature | Tamb | -65 |  | 150 | °C |  | 3 |
| Storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| Thermal resistance from junction to solder point | Rth(j-sp) |  |  | 150 | K/W | in free air [1] | 3 |
| Forward voltage | VF |  |  | 715 | mV | IF = 1 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02 | 4 |
| Forward voltage | VF |  |  | 855 | mV | IF = 10 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02 | 4 |
| Forward voltage | VF |  |  | 1 | V | IF = 50 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02 | 4 |
| Forward voltage | VF |  |  | 1.25 | V | IF = 150 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02 | 4 |
| Reverse current | IR |  |  | 30 | nA | VR = 25 V; Tj = 25 °C | 4 |
| Reverse current | IR |  |  | 0.5 | µA | VR = 80 V; Tj = 25 °C | 4 |
| Reverse current | IR |  |  | 30 | µA | VR = 25 V; Tj = 150 °C | 4 |
| Reverse current | IR |  |  | 50 | µA | VR = 80 V; Tj = 150 °C | 4 |
| Diode capacitance | Cd |  |  | 1.5 | pF | VR = 0 V; f = 1 MHz; Tj = 25 °C | 4 |
| Reverse recovery time | trr |  |  | 4 | ns | IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C | 4 |
| Peak forward recovery voltage | VFRM |  |  | 1.75 | V | IF = 10 mA; tr = 20 ns | 4 |

## CAD (KiCad official)

- Symbol: `BAS316Z`
- Footprint: `Diode_SMD:D_SOD-323`
- 3D model: SOD-323 (KiCad packages3D, STEP)
- 3D model files: `bas316z-etched.step` / `bas316z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bas316z.step` / `bas316z.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602626426328010752) (10 pp, sha256 `a394a3ebda870229`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bas316z-datasheet.pdf)