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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206

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BAS316Z

Nexperia · Switching Diodes · SOD-323

BAS316Z from Nexperia, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode of the diode; the graphic symbol marks K as the cathode, and the cathode tab is the soldering point referenced for the 400 mW Ptot rating (Tsp ≤ 90 °C).
2	A	passive	Anode of the diode, the opposite terminal to the cathode (K) in the graphic symbol.

Key specifications

Parameter	Value
Manufacturer	Nexperia
Package	SOD-323
Category	Diodes
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Repetitive peak reverse voltage	VRRM		100	V		3
Reverse voltage	VR		100	V		3
Forward current	IF		250	mA	Tj = 25 °C	3
Non-repetitive peak forward current	IFSM		4	A	tp = 1 µs; square wave; Tj(init) = 25 °C	3
Non-repetitive peak forward current	IFSM		1	A	tp = 1 ms; square wave; Tj(init) = 25 °C	3
Non-repetitive peak forward current	IFSM		0.5	A	tp = 1 s; square wave; Tj(init) = 25 °C	3
Repetitive peak forward current	IFRM		500	mA	tp ≤ 0.5 ms; δ = 0.25	3
Total power dissipation	Ptot		400	mW	Tsp ≤ 90 °C [1][2]	3
Junction temperature	Tj		150	°C		3
Ambient temperature	Tamb	-65	150	°C		3
Storage temperature	Tstg	-65	150	°C		3
Thermal resistance from junction to solder point	Rth(j-sp)		150	K/W	in free air [1]	3
Forward voltage	VF		715	mV	IF = 1 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02	4
Forward voltage	VF		855	mV	IF = 10 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02	4
Forward voltage	VF		1	V	IF = 50 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02	4
Forward voltage	VF		1.25	V	IF = 150 mA [1]; pulsed test tp ≤ 300 µs; δ ≤ 0.02	4
Reverse current	IR		30	nA	VR = 25 V; Tj = 25 °C	4
Reverse current	IR		0.5	µA	VR = 80 V; Tj = 25 °C	4
Reverse current	IR		30	µA	VR = 25 V; Tj = 150 °C	4
Reverse current	IR		50	µA	VR = 80 V; Tj = 150 °C	4
Diode capacitance	Cd		1.5	pF	VR = 0 V; f = 1 MHz; Tj = 25 °C	4
Reverse recovery time	trr		4	ns	IF = 10 mA; IR = 10 mA; RL = 100 Ω; IR(meas) = 1 mA; Tamb = 25 °C	4
Peak forward recovery voltage	VFRM		1.75	V	IF = 10 mA; tr = 20 ns	4

CAD (KiCad official)

Symbol: BAS316Z
Footprint: Diode_SMD:D_SOD-323
3D model: SOD-323 (KiCad packages3D, STEP)
3D model files: bas316z-etched.step / bas316z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bas316z.step / bas316z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Nexperia datasheet (10 pp, sha256 a394a3ebda870229, retrieved 2026-10-23, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF