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AUIRFS3206TRL

Public Made by Adom

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Infineon Technologies MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsauirfs3206trlfactory-2.0.0extractor-text

Verified AUIRFS3206TRL

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AUIRFS3206TRL · D2PAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • ✓distributor: lcsc C533378, digikey AUIRFS3206TRLTR-ND, mouser 942-AUIRFS3206TRL
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-m0svqkw9/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ auirfs3206trl.kicad_sym✓ auirfs3206trl.kicad_mod✓ auirfs3206trl.step
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AUIRFS3206TRL

Infineon Technologies · MOSFETs · D2PAK

AUIRFS3206TRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the MOSFET with VGS rated ±20 V max and a gate threshold voltage of 2.0 V min to 4.0 V max at ID = 150µA.
2 D passive Drain (also the tab); rated VDSS 60 V, with 210 A silicon-limited and 120 A package-limited continuous current at TC = 25°C.
3 S passive Source; the body diode runs from source to drain, with continuous source current up to 210 A and VSD max 1.3 V at IS = 75 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package D2PAK
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 2.4 3 mΩ VGS = 10V, ID = 75A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150µA 2
Forward Transconductance gfs 210 S VDS = 50V, ID = 75A 2
Drain-to-Source Leakage Current IDSS 20 µA VDS = 60V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 48V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Total Gate Charge Qg 120 170 nC ID = 75A, VDS = 30V, VGS = 10V 2
Continuous Source Current (Body Diode) IS 210 A MOSFET symbol showing integral reverse p-n junction diode 2
Pulsed Source Current (Body Diode) ISM 840 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 75A, VGS = 0V 2
Reverse Recovery Time trr 33 50 ns TJ = 25°C, VDD = 51V, IF = 75A, di/dt = 100A/µs 2
Reverse Recovery Time trr 37 56 ns TJ = 125°C, VDD = 51V, IF = 75A, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 41 62 nC TJ = 25°C, VDD = 51V, IF = 75A, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 53 80 nC TJ = 125°C, VDD = 51V, IF = 75A, di/dt = 100A/µs 2
Continuous Drain Current, Silicon Limited ID 210 A TC = 25°C, VGS @ 10V (Silicon Limited) 1
Continuous Drain Current, Silicon Limited ID 150 A TC = 100°C, VGS @ 10V (Silicon Limited) 1
Continuous Drain Current, Package Limited ID 120 A TC = 25°C, VGS @ 10V (Package Limited) 1
Pulsed Drain Current IDM 840 A 1
Maximum Power Dissipation PD 300 W TC = 25°C 1
Linear Derating Factor 2 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy EAS 170 mJ Thermally Limited 1
Peak Diode Recovery dv/dt 5 V/ns 1
Operating Junction Temperature TJ -55 175 °C Operating Junction 1
Soldering Temperature 300 °C 10 seconds, 1.6mm from case 1
Junction-to-Case Thermal Resistance RθJC 0.5 °C/W 1
Junction-to-Ambient Thermal Resistance (PCB Mount), D2-Pak RθJA 40 °C/W PCB mount, D2-Pak 1

CAD (KiCad official)

  • Symbol: AUIRFS3206TRL
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: auirfs3206trl-etched.step / auirfs3206trl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirfs3206trl.step / auirfs3206trl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 6746c8ad7d5d6ddf, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF