AUIRFS3206TRL from Infineon Technologies, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate; controls the MOSFET with VGS rated ±20 V max and a gate threshold voltage of 2.0 V min to 4.0 V max at ID = 150µA.
2	D	passive	Drain (also the tab); rated VDSS 60 V, with 210 A silicon-limited and 120 A package-limited continuous current at TC = 25°C.
3	S	passive	Source; the body diode runs from source to drain, with continuous source current up to 210 A and VSD max 1.3 V at IS = 75 A.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	D2PAK
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-to-Source Breakdown Voltage	V(BR)DSS	60			V	VGS = 0V, ID = 250µA	2
Static Drain-to-Source On-Resistance	RDS(on)		2.4	3	mΩ	VGS = 10V, ID = 75A	2
Gate Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 150µA	2
Forward Transconductance	gfs	210			S	VDS = 50V, ID = 75A	2
Drain-to-Source Leakage Current	IDSS			20	µA	VDS = 60V, VGS = 0V	2
Drain-to-Source Leakage Current	IDSS			250	µA	VDS = 48V, VGS = 0V, TJ = 125°C	2
Gate-to-Source Forward Leakage	IGSS			100	nA	VGS = 20V	2
Gate-to-Source Reverse Leakage	IGSS			-100	nA	VGS = -20V	2
Total Gate Charge	Qg		120	170	nC	ID = 75A, VDS = 30V, VGS = 10V	2
Continuous Source Current (Body Diode)	IS			210	A	MOSFET symbol showing integral reverse p-n junction diode	2
Pulsed Source Current (Body Diode)	ISM			840	A		2
Diode Forward Voltage	VSD			1.3	V	TJ = 25°C, IS = 75A, VGS = 0V	2
Reverse Recovery Time	trr		33	50	ns	TJ = 25°C, VDD = 51V, IF = 75A, di/dt = 100A/µs	2
Reverse Recovery Time	trr		37	56	ns	TJ = 125°C, VDD = 51V, IF = 75A, di/dt = 100A/µs	2
Reverse Recovery Charge	Qrr		41	62	nC	TJ = 25°C, VDD = 51V, IF = 75A, di/dt = 100A/µs	2
Reverse Recovery Charge	Qrr		53	80	nC	TJ = 125°C, VDD = 51V, IF = 75A, di/dt = 100A/µs	2
Continuous Drain Current, Silicon Limited	ID			210	A	TC = 25°C, VGS @ 10V (Silicon Limited)	1
Continuous Drain Current, Silicon Limited	ID			150	A	TC = 100°C, VGS @ 10V (Silicon Limited)	1
Continuous Drain Current, Package Limited	ID			120	A	TC = 25°C, VGS @ 10V (Package Limited)	1
Pulsed Drain Current	IDM			840	A		1
Maximum Power Dissipation	PD			300	W	TC = 25°C	1
Linear Derating Factor				2	W/°C		1
Gate-to-Source Voltage	VGS	-20		20	V		1
Single Pulse Avalanche Energy	EAS			170	mJ	Thermally Limited	1
Peak Diode Recovery	dv/dt			5	V/ns		1
Operating Junction Temperature	TJ	-55		175	°C	Operating Junction	1
Soldering Temperature				300	°C	10 seconds, 1.6mm from case	1
Junction-to-Case Thermal Resistance	RθJC			0.5	°C/W		1
Junction-to-Ambient Thermal Resistance (PCB Mount), D2-Pak	RθJA			40	°C/W	PCB mount, D2-Pak	1

CAD (KiCad official)

Symbol: AUIRFS3206TRL
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: D2PAK (KiCad packages3D, STEP)
3D model files: auirfs3206trl-etched.step / auirfs3206trl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirfs3206trl.step / auirfs3206trl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (11 pp, sha256 6746c8ad7d5d6ddf, retrieved 2026-10-30, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

AUIRFS3206TRL

Verified AUIRFS3206TRL

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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