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AUIRF7343QTR

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Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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AUIRF7343QTR

Infineon Technologies · MOSFETs · SO-8

AUIRF7343QTR from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (55V, 4.7A continuous at TA=25°C, RDS(on) 0.050 ohm max at VGS=10V).
2 G1 input Gate of the N-channel MOSFET with logic-level drive, rated for VGS of ±20V maximum.
3 S2 passive Source of the P-channel MOSFET (-55V, -3.4A continuous at TA=25°C, RDS(on) 0.105 ohm max at VGS=-10V).
4 G2 input Gate of the P-channel MOSFET with logic-level drive, rated for VGS of ±20V maximum.
5 D2 passive Drain of the P-channel MOSFET, rated for VDS of -55V and pulsed drain current of -27A.
6 D2 passive Drain of the P-channel MOSFET, rated for VDS of -55V and pulsed drain current of -27A.
7 D1 passive Drain of the N-channel MOSFET, rated for VDS of 55V and pulsed drain current of 38A.
8 D1 passive Drain of the N-channel MOSFET, rated for VDS of 55V and pulsed drain current of 38A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage N-Ch VDS 55 V N-Channel 1
Drain-Source Voltage P-Ch VDS -55 V P-Channel 1
Continuous Drain Current N-Ch ID 4.7 A TA = 25°C, VGS @ 10V 1
Continuous Drain Current P-Ch ID -3.4 A TA = 25°C, VGS @ 10V 1
Continuous Drain Current N-Ch ID 3.8 A TA = 70°C, VGS @ 10V 1
Continuous Drain Current P-Ch ID -2.7 A TA = 70°C, VGS @ 10V 1
Pulsed Drain Current N-Ch IDM 38 A 1
Pulsed Drain Current P-Ch IDM -27 A 1
Maximum Power Dissipation PD 2 W TA = 25°C 1
Maximum Power Dissipation PD 1.3 W TA = 70°C 1
Single Pulse Avalanche Energy N-Ch EAS 72 mJ Thermally limited, N-Channel 1
Single Pulse Avalanche Energy P-Ch EAS 114 mJ Thermally limited, P-Channel 1
Avalanche Current N-Ch IAR 4.7 A N-Channel 1
Avalanche Current P-Ch IAR -3.4 A P-Channel 1
Repetitive Avalanche Energy EAR 0.2 mJ 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt N-Ch dv/dt 5 V/ns N-Channel 1
Peak Diode Recovery dv/dt P-Ch dv/dt -5 V/ns P-Channel 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Junction-to-Ambient Thermal Resistance RθJA 62.5 °C/W PCB Mount, steady state 1
Drain-to-Source Breakdown Voltage N-Ch V(BR)DSS 55 V VGS = 0V, ID = 250µA 2
Drain-to-Source Breakdown Voltage P-Ch V(BR)DSS -55 V VGS = 0V, ID = -250µA 2
Breakdown Voltage Temp. Coefficient N-Ch ΔV(BR)DSS/ΔTJ 0.059 V/°C Reference to 25°C, ID = 1mA 2
Breakdown Voltage Temp. Coefficient P-Ch ΔV(BR)DSS/ΔTJ 0.054 V/°C Reference to 25°C, ID = -1mA 2
Static On-Resistance N-Ch RDS(on) 0.043 0.05 Ω VGS = 10V, ID = 4.7A 2
Static On-Resistance N-Ch RDS(on) 0.056 0.065 Ω VGS = 4.5V, ID = 3.8A 2
Static On-Resistance P-Ch RDS(on) 0.095 0.105 Ω VGS = -10V, ID = -3.4A 2
Static On-Resistance P-Ch RDS(on) 0.15 0.17 Ω VGS = -4.5V, ID = -2.7A 2
Gate Threshold Voltage N-Ch VGS(th) 1 V VDS = VGS, ID = 250µA 2
Gate Threshold Voltage P-Ch VGS(th) -1 V VDS = VGS, ID = -250µA 2
Forward Transconductance N-Ch gfs 7.9 S VDS = 10V, ID = 4.5A 2
Forward Transconductance P-Ch gfs 3.3 S VDS = -10V, ID = -3.1A 2
Drain-to-Source Leakage Current N-Ch IDSS 2 µA VDS = 55V, VGS = 0V 2
Drain-to-Source Leakage Current P-Ch IDSS -2 µA VDS = -55V, VGS = 0V 2
Drain-to-Source Leakage Current N-Ch IDSS 25 µA VDS = 55V, VGS = 0V, TJ = 55°C 2
Drain-to-Source Leakage Current P-Ch IDSS -25 µA VDS = -55V, VGS = 0V, TJ = 55°C 2
Gate-to-Source Forward Leakage IGSS -100 100 nA VGS = ± 20V 2
Gate-to-Source Reverse Leakage IGSS -100 100 nA VGS = ± 20V 2
Total Gate Charge N-Ch Qg 24 36 nC ID = 4.5A, VDS = 44V, VGS = 10V 2
Total Gate Charge P-Ch Qg 26 38 nC ID = -3.1A, VDS = -44V, VGS = -10V 2
Gate-to-Source Charge N-Ch Qgs 2.3 3.4 nC ID = 4.5A, VDS = 44V, VGS = 10V 2
Gate-to-Source Charge P-Ch Qgs 3 4.5 nC ID = -3.1A, VDS = -44V, VGS = -10V 2
Gate-to-Drain Charge N-Ch Qgd 7 10 nC ID = 4.5A, VDS = 44V, VGS = 10V 2
Gate-to-Drain Charge P-Ch Qgd 8.4 13 nC ID = -3.1A, VDS = -44V, VGS = -10V 2
Turn-On Delay Time N-Ch td(on) 8.3 12 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 28Ω 2
Turn-On Delay Time P-Ch td(on) 14 22 ns VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 28Ω 2
Rise Time N-Ch tr 3.2 4.8 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 28Ω 2
Rise Time P-Ch tr 10 15 ns VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 28Ω 2
Turn-Off Delay Time N-Ch td(off) 32 48 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 28Ω 2
Turn-Off Delay Time P-Ch td(off) 43 64 ns VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 28Ω 2
Fall Time N-Ch tf 13 20 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, RD = 28Ω 2
Fall Time P-Ch tf 22 32 ns VDD = -28V, ID = -1.0A, RG = 6.0Ω, RD = 28Ω 2
Continuous Source Current N-Ch (Body Diode) IS 2 A 2
Continuous Source Current P-Ch (Body Diode) IS -2 A 2
Pulsed Source Current N-Ch (Body Diode) ISM 38 A 2
Pulsed Source Current P-Ch (Body Diode) ISM -27 A 2
Diode Forward Voltage N-Ch VSD 0.7 1.2 V TJ = 25°C, IS = 2.0A, VGS = 0V 2
Diode Forward Voltage P-Ch VSD -0.8 -1.2 V TJ = 25°C, IS = -2.0A, VGS = 0V 2
Reverse Recovery Time N-Ch trr 60 90 ns TJ = 25°C, IF = 2.0A, di/dt = 100A/µs 2
Reverse Recovery Time P-Ch trr 54 80 ns TJ = 25°C, IF = -2.0A, di/dt = 100A/µs 2
Reverse Recovery Charge N-Ch Qrr 120 170 nC TJ = 25°C, IF = 2.0A, di/dt = 100A/µs 2
Reverse Recovery Charge P-Ch Qrr 85 130 nC TJ = 25°C, IF = -2.0A, di/dt = 100A/µs 2

CAD (KiCad official)

  • Symbol: AUIRF7343QTR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: auirf7343qtr-etched.step / auirf7343qtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirf7343qtr.step / auirf7343qtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (11 pp, sha256 2bc094a8bfed7775, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF