# AUIRF7341QTR

**Infineon Technologies** · MOSFETs · SO-8

AUIRF7341QTR from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of MOSFET 1; continuous body-diode source current IS is 2.4 A maximum. |
| 2 | G1 | input | Gate terminal of MOSFET 1; gate-to-source voltage is rated ±20 V. |
| 3 | S2 | passive | Source terminal of MOSFET 2; continuous body-diode source current IS is 2.4 A maximum. |
| 4 | G2 | input | Gate terminal of MOSFET 2; gate-to-source voltage is rated ±20 V. |
| 5 | D2 | passive | Drain terminal of MOSFET 2; drain-source voltage is rated 55 V maximum. |
| 6 | D2 | passive | Drain terminal of MOSFET 2 (second drain pin, same net as pin 5); drain-source voltage is rated 55 V maximum. |
| 7 | D1 | passive | Drain terminal of MOSFET 1; drain-source voltage is rated 55 V maximum. |
| 8 | D1 | passive | Drain terminal of MOSFET 1 (second drain pin, same net as pin 7); drain-source voltage is rated 55 V maximum. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 55 | V |  | 1 |
| Continuous Drain Current at TA = 25°C | ID |  |  | 5.1 | A | VGS @ 10V | 1 |
| Continuous Drain Current at TA = 70°C | ID |  |  | 4.2 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 42 | A |  | 1 |
| Maximum Power Dissipation at TA = 25°C | PD |  |  | 2.4 | W |  | 1 |
| Maximum Power Dissipation at TA = 70°C | PD |  |  | 1.7 | W |  | 1 |
| Linear Derating Factor |  |  |  | 16 | mW/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Single Pulse Avalanche Energy (Thermally Limited) | EAS |  |  | 140 | mJ |  | 1 |
| Avalanche Current | IAR |  |  | 5.1 | A |  | 1 |
| Operating Junction Temperature | TJ | -55 |  | 175 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 175 | °C |  | 1 |
| Junction-to-Ambient Thermal Resistance | RJA |  |  | 62.5 | °C/W | Board mounted, still air | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 55 |  |  | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 0.043 | 0.05 | Ω | VGS = 10V, ID = 5.1A | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 0.056 | 0.065 | Ω | VGS = 4.5V, ID = 4.42A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gfs | 10.4 |  |  | S | VDS = 10V, ID = 5.2A | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 2 | µA | VDS = 44V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 25 | µA | VDS = 44V, VGS = 0V, TJ = 150°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -100 | nA | VGS = -20V | 2 |
| Total Gate Charge | Qg |  | 29 | 44 | nC | ID = 5.2A, VDS = 44V, VGS = 10V | 2 |
| Gate-to-Source Charge | Qgs |  | 2.9 | 4.4 | nC | ID = 5.2A, VDS = 44V, VGS = 10V | 2 |
| Gate-to-Drain Charge | Qgd |  | 7.3 | 11 | nC | ID = 5.2A, VDS = 44V, VGS = 10V | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 2.4 | A |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 42 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | TJ = 25°C, IS = 2.6A, VGS = 0V | 2 |
| Reverse Recovery Time | trr |  | 51 | 77 | ns | TJ = 25°C, IF = 2.6A, di/dt = 100A/µs | 2 |
| Reverse Recovery Charge | Qrr |  | 76 | 114 | nC | TJ = 25°C, IF = 2.6A, di/dt = 100A/µs | 2 |
| Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ |  | 0.052 |  | V/°C | Reference to 25°C, ID = 1mA | 2 |
| Turn-On Delay Time | td(on) |  | 9.2 |  | ns | VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V | 2 |
| Rise Time | tr |  | 7.7 |  | ns | VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V | 2 |
| Turn-Off Delay Time | td(off) |  | 31 |  | ns | VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V | 2 |
| Fall Time | tf |  | 12.5 |  | ns | VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V | 2 |
| Input Capacitance | Ciss |  | 780 |  | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 190 |  | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 66 |  | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 2 |

## CAD (KiCad official)

- Symbol: `AUIRF7341QTR`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `auirf7341qtr-etched.step` / `auirf7341qtr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `auirf7341qtr.step` / `auirf7341qtr.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885326059720704) (10 pp, sha256 `37f49fdd0a649587`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/auirf7341qtr-datasheet.pdf)