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AUIRF7341QTR

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Infineon Technologies MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AUIRF7341QTR

Infineon Technologies · MOSFETs · SO-8

AUIRF7341QTR from Infineon Technologies, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET 1; continuous body-diode source current IS is 2.4 A maximum.
2 G1 input Gate terminal of MOSFET 1; gate-to-source voltage is rated ±20 V.
3 S2 passive Source terminal of MOSFET 2; continuous body-diode source current IS is 2.4 A maximum.
4 G2 input Gate terminal of MOSFET 2; gate-to-source voltage is rated ±20 V.
5 D2 passive Drain terminal of MOSFET 2; drain-source voltage is rated 55 V maximum.
6 D2 passive Drain terminal of MOSFET 2 (second drain pin, same net as pin 5); drain-source voltage is rated 55 V maximum.
7 D1 passive Drain terminal of MOSFET 1; drain-source voltage is rated 55 V maximum.
8 D1 passive Drain terminal of MOSFET 1 (second drain pin, same net as pin 7); drain-source voltage is rated 55 V maximum.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 55 V 1
Continuous Drain Current at TA = 25°C ID 5.1 A VGS @ 10V 1
Continuous Drain Current at TA = 70°C ID 4.2 A VGS @ 10V 1
Pulsed Drain Current IDM 42 A 1
Maximum Power Dissipation at TA = 25°C PD 2.4 W 1
Maximum Power Dissipation at TA = 70°C PD 1.7 W 1
Linear Derating Factor 16 mW/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Single Pulse Avalanche Energy (Thermally Limited) EAS 140 mJ 1
Avalanche Current IAR 5.1 A 1
Operating Junction Temperature TJ -55 175 °C 1
Storage Temperature Range TSTG -55 175 °C 1
Junction-to-Ambient Thermal Resistance RJA 62.5 °C/W Board mounted, still air 1
Drain-to-Source Breakdown Voltage V(BR)DSS 55 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 0.043 0.05 Ω VGS = 10V, ID = 5.1A 2
Static Drain-to-Source On-Resistance RDS(on) 0.056 0.065 Ω VGS = 4.5V, ID = 4.42A 2
Gate Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250µA 2
Forward Transconductance gfs 10.4 S VDS = 10V, ID = 5.2A 2
Drain-to-Source Leakage Current IDSS 2 µA VDS = 44V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 25 µA VDS = 44V, VGS = 0V, TJ = 150°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Total Gate Charge Qg 29 44 nC ID = 5.2A, VDS = 44V, VGS = 10V 2
Gate-to-Source Charge Qgs 2.9 4.4 nC ID = 5.2A, VDS = 44V, VGS = 10V 2
Gate-to-Drain Charge Qgd 7.3 11 nC ID = 5.2A, VDS = 44V, VGS = 10V 2
Continuous Source Current (Body Diode) IS 2.4 A 2
Pulsed Source Current (Body Diode) ISM 42 A 2
Diode Forward Voltage VSD 1.2 V TJ = 25°C, IS = 2.6A, VGS = 0V 2
Reverse Recovery Time trr 51 77 ns TJ = 25°C, IF = 2.6A, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 76 114 nC TJ = 25°C, IF = 2.6A, di/dt = 100A/µs 2
Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 0.052 V/°C Reference to 25°C, ID = 1mA 2
Turn-On Delay Time td(on) 9.2 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V 2
Rise Time tr 7.7 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V 2
Turn-Off Delay Time td(off) 31 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V 2
Fall Time tf 12.5 ns VDD = 28V, ID = 1.0A, RG = 6.0Ω, VGS = 10V 2
Input Capacitance Ciss 780 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2
Output Capacitance Coss 190 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 66 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2

CAD (KiCad official)

  • Symbol: AUIRF7341QTR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: auirf7341qtr-etched.step / auirf7341qtr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirf7341qtr.step / auirf7341qtr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 37f49fdd0a649587, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF