component
AUIRF540Z
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
AUIRF540Z
Infineon Technologies · MOSFETs · TO-220AB
AUIRF540Z from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±20 V max and gate threshold voltage is 2.0 V min to 4.0 V max at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-to-source breakdown voltage is 100 V min, with continuous drain current of 36 A at TC = 25°C and pulsed drain current of 140 A. |
| 3 | S | passive | Source; body-diode continuous source current is 36 A max and pulsed source current is 140 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0V, ID = 250µA | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(on) | 21 | 26.5 | mΩ | VGS = 10V, ID = 22A | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Forward Transconductance | gfs | 36 | S | VDS = 25V, ID = 22A | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 20 | µA | VDS =100V, VGS = 0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 250 | µA | VDS = 100V,VGS = 0V,TJ =125°C | 2 | ||
| Gate-to-Source Forward Leakage | IGSS | 200 | nA | VGS = 20V | 2 | ||
| Gate-to-Source Reverse Leakage | IGSS | -200 | nA | VGS = -20V | 2 | ||
| Total Gate Charge | Qg | 42 | 63 | nC | ID = 22A, VDS = 80V, VGS = 10V | 2 | |
| Continuous Source Current | IS | 36 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Pulsed Source Current | ISM | 140 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 | ||
| Diode Forward Voltage | VSD | 1.3 | V | TJ = 25°C,IS = 22A,VGS = 0V | 2 | ||
| Reverse Recovery Time | trr | 33 | 50 | ns | TJ = 25°C ,IF = 22A, VDD = 50V, di/dt = 100A/µs | 2 | |
| Reverse Recovery Charge | Qrr | 41 | 62 | nC | TJ = 25°C ,IF = 22A, VDD = 50V, di/dt = 100A/µs | 2 | |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 36 | A | TC = 25°C | 1 | ||
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | 25 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 140 | A | 1 | |||
| Maximum Power Dissipation | PD | 92 | W | TC = 25°C | 1 | ||
| Linear Derating Factor | 0.61 | W/°C | 1 | ||||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | ± 20 V | 1 | |
| Single Pulse Avalanche Energy (Thermally Limited) | EAS | 83 | mJ | 1 | |||
| Single Pulse Avalanche Energy Tested Value | EAS (tested) | 120 | mJ | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 175 | °C | 1 | ||
| Soldering Temperature | 300 | °C | for 10 seconds (1.6mm from case) | 1 | |||
| Junction-to-Case | RθJC | 1.64 | °C/W | 1 | |||
| Case-to-Sink, Flat, Greased Surface | RθCS | 0.5 | °C/W | 1 | |||
| Junction-to-Ambient | RθJA | 62 | °C/W | 1 | |||
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | 0.093 | V/°C | Reference to 25°C, ID = 1mA | 2 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 | ||
| Rise Time | tr | 51 | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 | ||
| Turn-Off Delay Time | td(off) | 43 | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 | ||
| Fall Time | tf | 39 | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 | ||
| Input Capacitance | Ciss | 1770 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 180 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 100 | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
AUIRF540Z - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files:
auirf540z-etched.step/auirf540z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auirf540z.step/auirf540z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (12 pp, sha256
05558ec92749386c, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AUIRF540Z
**Infineon Technologies** · MOSFETs · TO-220AB
AUIRF540Z from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage is rated ±20 V max and gate threshold voltage is 2.0 V min to 4.0 V max at VDS = VGS, ID = 250 µA. |
| 2 | D | passive | Drain; drain-to-source breakdown voltage is 100 V min, with continuous drain current of 36 A at TC = 25°C and pulsed drain current of 140 A. |
| 3 | S | passive | Source; body-diode continuous source current is 36 A max and pulsed source current is 140 A max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250µA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) | | 21 | 26.5 | mΩ | VGS = 10V, ID = 22A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gfs | 36 | | | S | VDS = 25V, ID = 22A | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 20 | µA | VDS =100V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS | | | 250 | µA | VDS = 100V,VGS = 0V,TJ =125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS | | | 200 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS | -200 | | | nA | VGS = -20V | 2 |
| Total Gate Charge | Qg | | 42 | 63 | nC | ID = 22A, VDS = 80V, VGS = 10V | 2 |
| Continuous Source Current | IS | | | 36 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Pulsed Source Current | ISM | | | 140 | A | MOSFET symbol showing integral reverse p-n junction diode | 2 |
| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C,IS = 22A,VGS = 0V | 2 |
| Reverse Recovery Time | trr | | 33 | 50 | ns | TJ = 25°C ,IF = 22A, VDD = 50V, di/dt = 100A/µs | 2 |
| Reverse Recovery Charge | Qrr | | 41 | 62 | nC | TJ = 25°C ,IF = 22A, VDD = 50V, di/dt = 100A/µs | 2 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 36 | A | TC = 25°C | 1 |
| Continuous Drain Current, VGS @ 10V (Silicon Limited) | ID | | | 25 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 140 | A | | 1 |
| Maximum Power Dissipation | PD | | | 92 | W | TC = 25°C | 1 |
| Linear Derating Factor | | | | 0.61 | W/°C | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | ± 20 V | 1 |
| Single Pulse Avalanche Energy (Thermally Limited) | EAS | | | 83 | mJ | | 1 |
| Single Pulse Avalanche Energy Tested Value | EAS (tested) | | | 120 | mJ | | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |
| Soldering Temperature | | | | 300 | °C | for 10 seconds (1.6mm from case) | 1 |
| Junction-to-Case | RθJC | | | 1.64 | °C/W | | 1 |
| Case-to-Sink, Flat, Greased Surface | RθCS | | 0.5 | | °C/W | | 1 |
| Junction-to-Ambient | RθJA | | | 62 | °C/W | | 1 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.093 | | V/°C | Reference to 25°C, ID = 1mA | 2 |
| Turn-On Delay Time | td(on) | | 15 | | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 |
| Rise Time | tr | | 51 | | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 |
| Turn-Off Delay Time | td(off) | | 43 | | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 |
| Fall Time | tf | | 39 | | ns | VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V | 2 |
| Input Capacitance | Ciss | | 1770 | | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
| Output Capacitance | Coss | | 180 | | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 100 | | pF | VGS = 0V, VDS = 25V, ƒ = 1.0MHz | 2 |
## CAD (KiCad official)
- Symbol: `AUIRF540Z`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `auirf540z-etched.step` / `auirf540z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `auirf540z.step` / `auirf540z.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Infineon Technologies datasheet](docs/auirf540z-datasheet.pdf) (12 pp, sha256 `05558ec92749386c`, retrieved 2026-10-26, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/auirf540z-datasheet.pdf)