component

AUIRF540Z

Public Made by Adom

by adom

Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsauirf540zfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 9d ago
viewers auirf540z: viewers · Ray 9d ago
auirf540z-etched.glb Publish 0.1.0 · Ray 9d ago
auirf540z-etched.step auirf540z: factory component page (tier=mfr) · Ray 9d ago
auirf540z-hero.glb auirf540z: hero GLB from the etched model (keeps the MPN mark) · Ray 9d ago
auirf540z-hero.overlay.json Publish 0.1.0 · Ray 9d ago
auirf540z.glb Publish 0.1.0 · Ray 9d ago
auirf540z.kicad_mod Publish 0.1.0 · Ray 9d ago
auirf540z.kicad_sym Publish 0.1.0 · Ray 9d ago
auirf540z.lbr Publish 0.1.0 · Ray 9d ago
auirf540z.step Publish 0.1.0 · Ray 9d ago
package.json Publish 0.1.0 · Ray 9d ago
page.json Set visibility: public · Ray 9d ago
README.md Publish 0.1.0 · Ray 9d ago

AUIRF540Z

Infineon Technologies · MOSFETs · TO-220AB

AUIRF540Z from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage is rated ±20 V max and gate threshold voltage is 2.0 V min to 4.0 V max at VDS = VGS, ID = 250 µA.
2 D passive Drain; drain-to-source breakdown voltage is 100 V min, with continuous drain current of 36 A at TC = 25°C and pulsed drain current of 140 A.
3 S passive Source; body-diode continuous source current is 36 A max and pulsed source current is 140 A max.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Static Drain-to-Source On-Resistance RDS(on) 21 26.5 mΩ VGS = 10V, ID = 22A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Forward Transconductance gfs 36 S VDS = 25V, ID = 22A 2
Drain-to-Source Leakage Current IDSS 20 µA VDS =100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 µA VDS = 100V,VGS = 0V,TJ =125°C 2
Gate-to-Source Forward Leakage IGSS 200 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -200 nA VGS = -20V 2
Total Gate Charge Qg 42 63 nC ID = 22A, VDS = 80V, VGS = 10V 2
Continuous Source Current IS 36 A MOSFET symbol showing integral reverse p-n junction diode 2
Pulsed Source Current ISM 140 A MOSFET symbol showing integral reverse p-n junction diode 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C,IS = 22A,VGS = 0V 2
Reverse Recovery Time trr 33 50 ns TJ = 25°C ,IF = 22A, VDD = 50V, di/dt = 100A/µs 2
Reverse Recovery Charge Qrr 41 62 nC TJ = 25°C ,IF = 22A, VDD = 50V, di/dt = 100A/µs 2
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 36 A TC = 25°C 1
Continuous Drain Current, VGS @ 10V (Silicon Limited) ID 25 A TC = 100°C 1
Pulsed Drain Current IDM 140 A 1
Maximum Power Dissipation PD 92 W TC = 25°C 1
Linear Derating Factor 0.61 W/°C 1
Gate-to-Source Voltage VGS -20 20 V ± 20 V 1
Single Pulse Avalanche Energy (Thermally Limited) EAS 83 mJ 1
Single Pulse Avalanche Energy Tested Value EAS (tested) 120 mJ 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature 300 °C for 10 seconds (1.6mm from case) 1
Junction-to-Case RθJC 1.64 °C/W 1
Case-to-Sink, Flat, Greased Surface RθCS 0.5 °C/W 1
Junction-to-Ambient RθJA 62 °C/W 1
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.093 V/°C Reference to 25°C, ID = 1mA 2
Turn-On Delay Time td(on) 15 ns VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V 2
Rise Time tr 51 ns VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V 2
Turn-Off Delay Time td(off) 43 ns VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V 2
Fall Time tf 39 ns VDD = 50V, ID = 22A, RG= 12Ω, VGS = 10V 2
Input Capacitance Ciss 1770 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 2
Output Capacitance Coss 180 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 2
Reverse Transfer Capacitance Crss 100 pF VGS = 0V, VDS = 25V, ƒ = 1.0MHz 2

CAD (KiCad official)

  • Symbol: AUIRF540Z
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: auirf540z-etched.step / auirf540z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); auirf540z.step / auirf540z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 05558ec92749386c, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF