component
ATM2N65TE
Public Made by Adomby adom
Agertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ATM2N65TE
Agertech · MOSFETs · TO-252
ATM2N65TE from Agertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input of the N-channel MOSFET, rated for VGSS of ±30V with a gate threshold voltage of 2.0 to 4.0V. |
| 2 | Drain | passive | Drain terminal, rated for VDSS of 650V and 2.0A continuous drain current (8.0A pulsed). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | TC = 25°C | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | TC = 25°C | 1 | |
| Avalanche Current | IAR | 2 | A | Note 2 | 1 | ||
| Drain Current Continuous | ID | 2 | A | TC = 25°C | 1 | ||
| Drain Current Pulsed | IDM | 8 | A | Note 2 | 1 | ||
| Avalanche Energy Single Pulsed | EAS | 140 | mJ | L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C | 1 | ||
| Avalanche Energy Repetitive | EAR | 4.5 | mJ | Note 2 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 1 | ||
| Power Dissipation TO-252 | PD | 28 | W | TC = 25°C | 1 | ||
| Junction Temperature | TJ | 150 | °C | 1 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS = 0V, ID = 250μA | 2 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS = 650V, VGS = 0V | 2 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS = 30V, VDS = 0V | 2 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS = -30V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250μA | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 3.9 | 5 | Ω | VGS = 10V, ID =1A | 2 | |
| Input Capacitance | CISS | 320 | 370 | pF | VDS =25V, VGS =0V, f =1MHz | 2 | |
| Output Capacitance | COSS | 40 | 50 | pF | VDS =25V, VGS =0V, f =1MHz | 2 | |
| Reverse Transfer Capacitance | CRSS | 9 | 12 | pF | VDS =25V, VGS =0V, f =1MHz | 2 | |
| Turn-On Delay Time | tD (ON) | 35 | 50 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 | |
| Turn-On Rise Time | tR | 40 | 60 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 | |
| Turn-Off Delay Time | tD(OFF) | 130 | 160 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 | |
| Turn-Off Fall Time | tF | 40 | 60 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 | |
| Total Gate Charge | QG | 45 | 55 | nC | VDS=520V, VGS=10V, ID=2.4A | 2 | |
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS = 0 V, ISD = 2.0 A | 2 | ||
| Continuous Drain-Source Current | ISD | 2 | A | 2 | |||
| Pulsed Drain-Source Current | ISM | 8 | A | 2 | |||
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | 0.4 | V/°C | ID=250μA, Referenced to 25°C | 2 | ||
| Gate-Source Charge | QGS | 4 | nC | VDS=520V, VGS=10V, ID=2.4A | 2 | ||
| Gate-Drain Charge | QGD | 8.4 | nC | VDS=520V, VGS=10V, ID=2.4A | 2 | ||
| Reverse Recovery Time | trr | 180 | ns | VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs | 2 | ||
| Reverse Recovery Charge | QRR | 0.72 | μC | VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
ATM2N65TE - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
atm2n65te-etched.step/atm2n65te-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);atm2n65te.step/atm2n65te.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Agertech datasheet (6 pp, sha256
da9a5068d1c2d173, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ATM2N65TE
**Agertech** · MOSFETs · TO-252
ATM2N65TE from Agertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input of the N-channel MOSFET, rated for VGSS of ±30V with a gate threshold voltage of 2.0 to 4.0V. |
| 2 | Drain | passive | Drain terminal, rated for VDSS of 650V and 2.0A continuous drain current (8.0A pulsed). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, connected to the body diode anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 650 | V | TC = 25°C | 1 |
| Gate-Source Voltage | VGSS | -30 | | 30 | V | TC = 25°C | 1 |
| Avalanche Current | IAR | | | 2 | A | Note 2 | 1 |
| Drain Current Continuous | ID | | | 2 | A | TC = 25°C | 1 |
| Drain Current Pulsed | IDM | | | 8 | A | Note 2 | 1 |
| Avalanche Energy Single Pulsed | EAS | | | 140 | mJ | L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C | 1 |
| Avalanche Energy Repetitive | EAR | | | 4.5 | mJ | Note 2 | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 1 |
| Power Dissipation TO-252 | PD | | | 28 | W | TC = 25°C | 1 |
| Junction Temperature | TJ | | | 150 | °C | | 1 |
| Operating Temperature | TOPR | -55 | | 150 | °C | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | °C | | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS = 0V, ID = 250μA | 2 |
| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS = 650V, VGS = 0V | 2 |
| Gate-Source Leakage Current Forward | IGSS | | | 100 | nA | VGS = 30V, VDS = 0V | 2 |
| Gate-Source Leakage Current Reverse | IGSS | -100 | | | nA | VGS = -30V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 3.9 | 5 | Ω | VGS = 10V, ID =1A | 2 |
| Input Capacitance | CISS | | 320 | 370 | pF | VDS =25V, VGS =0V, f =1MHz | 2 |
| Output Capacitance | COSS | | 40 | 50 | pF | VDS =25V, VGS =0V, f =1MHz | 2 |
| Reverse Transfer Capacitance | CRSS | | 9 | 12 | pF | VDS =25V, VGS =0V, f =1MHz | 2 |
| Turn-On Delay Time | tD (ON) | | 35 | 50 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 |
| Turn-On Rise Time | tR | | 40 | 60 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 |
| Turn-Off Delay Time | tD(OFF) | | 130 | 160 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 |
| Turn-Off Fall Time | tF | | 40 | 60 | ns | VDD =325V, ID =2.4A, RG=25Ω | 2 |
| Total Gate Charge | QG | | 45 | 55 | nC | VDS=520V, VGS=10V, ID=2.4A | 2 |
| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | VGS = 0 V, ISD = 2.0 A | 2 |
| Continuous Drain-Source Current | ISD | | | 2 | A | | 2 |
| Pulsed Drain-Source Current | ISM | | | 8 | A | | 2 |
| Breakdown Voltage Temperature Coefficient | △BVDSS/△TJ | | 0.4 | | V/°C | ID=250μA, Referenced to 25°C | 2 |
| Gate-Source Charge | QGS | | 4 | | nC | VDS=520V, VGS=10V, ID=2.4A | 2 |
| Gate-Drain Charge | QGD | | 8.4 | | nC | VDS=520V, VGS=10V, ID=2.4A | 2 |
| Reverse Recovery Time | trr | | 180 | | ns | VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs | 2 |
| Reverse Recovery Charge | QRR | | 0.72 | | μC | VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs | 2 |
## CAD (KiCad official)
- Symbol: `ATM2N65TE`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `atm2n65te-etched.step` / `atm2n65te-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `atm2n65te.step` / `atm2n65te.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Agertech datasheet](docs/atm2n65te-datasheet.pdf) (6 pp, sha256 `da9a5068d1c2d173`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/atm2n65te-datasheet.pdf)