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ATM2N65TE

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Agertech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ATM2N65TE

Agertech · MOSFETs · TO-252

ATM2N65TE from Agertech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input of the N-channel MOSFET, rated for VGSS of ±30V with a gate threshold voltage of 2.0 to 4.0V.
2 Drain passive Drain terminal, rated for VDSS of 650V and 2.0A continuous drain current (8.0A pulsed).
3 Source passive Source terminal of the N-channel MOSFET, connected to the body diode anode.

Key specifications

Parameter Value
Manufacturer Agertech
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 650 V TC = 25°C 1
Gate-Source Voltage VGSS -30 30 V TC = 25°C 1
Avalanche Current IAR 2 A Note 2 1
Drain Current Continuous ID 2 A TC = 25°C 1
Drain Current Pulsed IDM 8 A Note 2 1
Avalanche Energy Single Pulsed EAS 140 mJ L=64mH, IAS=2.0A, VDD=50V, RG=25Ω, Starting TJ = 25°C 1
Avalanche Energy Repetitive EAR 4.5 mJ Note 2 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 1
Power Dissipation TO-252 PD 28 W TC = 25°C 1
Junction Temperature TJ 150 °C 1
Operating Temperature TOPR -55 150 °C 1
Storage Temperature TSTG -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 650 V VGS = 0V, ID = 250μA 2
Drain-Source Leakage Current IDSS 10 μA VDS = 650V, VGS = 0V 2
Gate-Source Leakage Current Forward IGSS 100 nA VGS = 30V, VDS = 0V 2
Gate-Source Leakage Current Reverse IGSS -100 nA VGS = -30V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-State Resistance RDS(ON) 3.9 5 Ω VGS = 10V, ID =1A 2
Input Capacitance CISS 320 370 pF VDS =25V, VGS =0V, f =1MHz 2
Output Capacitance COSS 40 50 pF VDS =25V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance CRSS 9 12 pF VDS =25V, VGS =0V, f =1MHz 2
Turn-On Delay Time tD (ON) 35 50 ns VDD =325V, ID =2.4A, RG=25Ω 2
Turn-On Rise Time tR 40 60 ns VDD =325V, ID =2.4A, RG=25Ω 2
Turn-Off Delay Time tD(OFF) 130 160 ns VDD =325V, ID =2.4A, RG=25Ω 2
Turn-Off Fall Time tF 40 60 ns VDD =325V, ID =2.4A, RG=25Ω 2
Total Gate Charge QG 45 55 nC VDS=520V, VGS=10V, ID=2.4A 2
Drain-Source Diode Forward Voltage VSD 1.4 V VGS = 0 V, ISD = 2.0 A 2
Continuous Drain-Source Current ISD 2 A 2
Pulsed Drain-Source Current ISM 8 A 2
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ 0.4 V/°C ID=250μA, Referenced to 25°C 2
Gate-Source Charge QGS 4 nC VDS=520V, VGS=10V, ID=2.4A 2
Gate-Drain Charge QGD 8.4 nC VDS=520V, VGS=10V, ID=2.4A 2
Reverse Recovery Time trr 180 ns VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs 2
Reverse Recovery Charge QRR 0.72 μC VGS = 0 V, ISD = 2.4A, di/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: ATM2N65TE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: atm2n65te-etched.step / atm2n65te-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); atm2n65te.step / atm2n65te.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Agertech datasheet (6 pp, sha256 da9a5068d1c2d173, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF