component
ATM2312NSA
Public Made by Adomby adom
Agertech MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ATM2312NSA
Agertech · MOSFETs · SOT-23
ATM2312NSA from Agertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±8.0 V absolute maximum, with threshold of 0.45 V min to 1.0 V max at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain diode current is 1.04 A maximum. |
| 3 | D | passive | Drain; drain-source voltage is 20 V maximum with 5 A continuous and 20 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | V | VGS = 0V, ID = 250μA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VDS = VGS, ID = 250μA | 2 |
| Gate Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±8V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS =20V, VGS = 0V | 2 | ||
| Drain-Source On-Resistance | RDS(ON) | 18 | 31.8 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 23 | 35.6 | mΩ | VGS = 2.5V, ID = 4.7A | 2 | |
| Drain-Source On-Resistance | RDS(ON) | 30 | 41.4 | mΩ | VGS = 1.8V, ID = 4.3A | 2 | |
| Gate Resistance | Rg | 0.5 | 4.8 | Ω | f=1MHz | 2 | |
| Turn-On Delay Time | td(on) | 10 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 | ||
| Turn-On Rise Time | tr | 20 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 | ||
| Turn-Off Delay Time | td(off) | 32 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 | ||
| Turn-Off Fall Time | tf | 12 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 | ||
| Forward Diode Voltage | VSD | 0.75 | 1.2 | V | VGS = 0V, IS = 4A | 2 | |
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -8 | 8 | V | TA=25℃ | 1 | |
| Continuous Drain Current | ID | 5 | A | t = 5s | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 1.04 | A | 1 | |||
| Maximum Power Dissipation | PD | 0.35 | W | t = 5s | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 357 | ℃/W | 1 | |||
| Forward transconductance | gfs | 6 | S | VDS = 10V, ID = 5.0A | 2 | ||
| Input Capacitance | Ciss | 865 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Output Capacitance | Coss | 105 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
CAD (KiCad official)
- Symbol:
ATM2312NSA - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
atm2312nsa-etched.step/atm2312nsa-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);atm2312nsa.step/atm2312nsa.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Agertech datasheet (6 pp, sha256
3b78b7a46ce67edf, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ATM2312NSA
**Agertech** · MOSFETs · SOT-23
ATM2312NSA from Agertech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±8.0 V absolute maximum, with threshold of 0.45 V min to 1.0 V max at ID = 250 µA. |
| 2 | S | passive | Source; continuous source-drain diode current is 1.04 A maximum. |
| 3 | D | passive | Drain; drain-source voltage is 20 V maximum with 5 A continuous and 20 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Agertech |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID = 250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VDS = VGS, ID = 250μA | 2 |
| Gate Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±8V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS =20V, VGS = 0V | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 18 | 31.8 | mΩ | VGS = 4.5V, ID = 5.0A | 2 |
| Drain-Source On-Resistance | RDS(ON) | 23 | | 35.6 | mΩ | VGS = 2.5V, ID = 4.7A | 2 |
| Drain-Source On-Resistance | RDS(ON) | | 30 | 41.4 | mΩ | VGS = 1.8V, ID = 4.3A | 2 |
| Gate Resistance | Rg | 0.5 | | 4.8 | Ω | f=1MHz | 2 |
| Turn-On Delay Time | td(on) | | | 10 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 |
| Turn-On Rise Time | tr | | | 20 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 |
| Turn-Off Delay Time | td(off) | | | 32 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 |
| Turn-Off Fall Time | tf | | | 12 | ns | VDD = 10V, RL = 2.2Ω, RG = 1Ω, VGEN = 5V, ID = 4A | 2 |
| Forward Diode Voltage | VSD | | 0.75 | 1.2 | V | VGS = 0V, IS = 4A | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -8 | | 8 | V | TA=25℃ | 1 |
| Continuous Drain Current | ID | | | 5 | A | t = 5s | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | | 1 |
| Continuous Source-Drain Diode Current | IS | | | 1.04 | A | | 1 |
| Maximum Power Dissipation | PD | | | 0.35 | W | t = 5s | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | 357 | | ℃/W | | 1 |
| Forward transconductance | gfs | | 6 | | S | VDS = 10V, ID = 5.0A | 2 |
| Input Capacitance | Ciss | | 865 | | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
| Output Capacitance | Coss | | 105 | | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 55 | | pF | VDS = 10V, VGS = 0V, f = 1MHz | 2 |
## CAD (KiCad official)
- Symbol: `ATM2312NSA`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `atm2312nsa-etched.step` / `atm2312nsa-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `atm2312nsa.step` / `atm2312nsa.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Agertech datasheet](docs/atm2312nsa-datasheet.pdf) (6 pp, sha256 `3b78b7a46ce67edf`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/atm2312nsa-datasheet.pdf)