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ASDM7002EZA-R

Public Made by Adom

by adom

ASDsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ASDM7002EZA-R

ASDsemi · MOSFETs · SOT-23

ASDM7002EZA-R from ASDsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, with an ESD protection diode to source (ESD >2K), logic-level drive compatible with TTL/CMOS, and a maximum gate-source voltage of ±20 V.
2 S passive Source terminal of the N-channel MOSFET, with a body diode to drain rated 0.3 A continuous forward current.
3 D passive Drain terminal of the N-channel MOSFET, with 60 V maximum drain-source voltage and 0.3 A continuous drain current at TA=25°C.

Key specifications

Parameter Value
Manufacturer ASDsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGSS -20 20 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Diode Continuous Forward Current IS 0.3 A 1
Pulse Drain Current Tested IDM 1.2 A TA=25°C 1
Continuous Drain Current ID 0.3 A TA=25°C 1
Continuous Drain Current ID 0.25 A TA=70°C 1
Maximum Power Dissipation PD 0.36 W TA=25°C 1
Maximum Power Dissipation PD 0.23 W TA=70°C 1
Thermal Resistance-Junction to Ambient Steady State RJA 350 °C/W Surface Mounted on 1in2 FR-4 board with 1oz. (Note 2) 1
Drain-Source On-state Resistance RDS(ON) 1.6 2.5 Ω VGS=10V, ID=0.3A 2
Drain-Source On-state Resistance RDS(ON) 1.9 3 Ω VGS=4.5V, ID=0.2A 2
Diode Forward Voltage VSD 0.4 0.8 1.1 V IS=0.1A, VGS=0V 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250A 2
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250uA 2
Gate Leakage Current IGSS -10 10 uA VGS=±20V, VDS=0V 2

CAD (KiCad official)

  • Symbol: ASDM7002EZA-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: asdm7002eza-r-etched.step / asdm7002eza-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asdm7002eza-r.step / asdm7002eza-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ASDsemi datasheet (7 pp, sha256 48dced3ef054553d, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF