component
ASDM7002EZA-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM7002EZA-R
ASDsemi · MOSFETs · SOT-23
ASDM7002EZA-R from ASDsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, with an ESD protection diode to source (ESD >2K), logic-level drive compatible with TTL/CMOS, and a maximum gate-source voltage of ±20 V. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with a body diode to drain rated 0.3 A continuous forward current. |
| 3 | D | passive | Drain terminal of the N-channel MOSFET, with 60 V maximum drain-source voltage and 0.3 A continuous drain current at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 0.3 | A | 1 | |||
| Pulse Drain Current Tested | IDM | 1.2 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 0.3 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 0.25 | A | TA=70°C | 1 | ||
| Maximum Power Dissipation | PD | 0.36 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 0.23 | W | TA=70°C | 1 | ||
| Thermal Resistance-Junction to Ambient Steady State | RJA | 350 | °C/W | Surface Mounted on 1in2 FR-4 board with 1oz. (Note 2) | 1 | ||
| Drain-Source On-state Resistance | RDS(ON) | 1.6 | 2.5 | Ω | VGS=10V, ID=0.3A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 1.9 | 3 | Ω | VGS=4.5V, ID=0.2A | 2 | |
| Diode Forward Voltage | VSD | 0.4 | 0.8 | 1.1 | V | IS=0.1A, VGS=0V | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250A | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=60V, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250uA | 2 |
| Gate Leakage Current | IGSS | -10 | 10 | uA | VGS=±20V, VDS=0V | 2 |
CAD (KiCad official)
- Symbol:
ASDM7002EZA-R - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
asdm7002eza-r-etched.step/asdm7002eza-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm7002eza-r.step/asdm7002eza-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
48dced3ef054553d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).