component
ASDM68N80KQ-R
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ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM68N80KQ-R
ASDsemi · MOSFETs · TO-252
ASDM68N80KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), threshold 2 to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain (shortened middle lead, common with the exposed drain tab); drain-source voltage 68 V, continuous current 80 A at TC = 25ºC. |
| 3 | S | passive | Source; body diode continuous current 80 A and pulsed 320 A at TC = 25ºC. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 68 | V | VGS = 0V | 1 | ||
| Continuous Drain Current (TC = 25ºC) | ID | 80 | A | TC = 25ºC | 1 | ||
| Continuous Drain Current (TC = 100ºC) | ID | 49 | A | TC = 100ºC | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | note1: Repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 79 | mJ | note2: IAS = 42.5A, L=0.3mH, VDD = 50V, RG = 25Ω, Starting TJ = 25 | 1 | ||
| Avalanche Current | IAS | 23 | A | 1 | |||
| Power Dissipation (TC = 25ºC) | PD | 120 | W | TC = 25ºC; note3: based on TJ(MAX)=175°C, using junction-to-case thermal resistance | 1 | ||
| Power Dissipation (TC = 100ºC) | PD | 60 | W | TC = 100ºC; note3: based on TJ(MAX)=175°C, using junction-to-case thermal resistance | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | ºC | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 68 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS | 1 | μA | VDS = 68V, VGS = 0V, TJ = 25ºC | 2 | ||
| Zero Gate Voltage Drain Current (TJ = 100ºC) | IDSS | 25 | µA | VDS = 68V, VGS = 0V, TJ = 100ºC | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Drain-Source On-Resistance | RDS(on) | 7.7 | 9.5 | mΩ | VGS = 10V, ID = 30A | 2 | |
| Forward Transconductance | gfs | 17.1 | S | VDS = 10V, ID = 30A | 2 | ||
| Continuous Body Diode Current | IS | 80 | A | TC = 25ºC | 2 | ||
| Pulsed Diode Forward Current | ISM | 320 | A | TC = 25ºC | 2 | ||
| Body Diode Voltage | VSD | 1.2 | V | TJ = 25ºC, ISD = 30A, VGS = 0V | 2 | ||
| Thermal Resistance, Junction-to-Case | RthJC | 1.4 | ºC/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RthJA | 62 | ºC/W | 1 |
CAD (KiCad official)
- Symbol:
ASDM68N80KQ-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
asdm68n80kq-r-etched.step/asdm68n80kq-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm68n80kq-r.step/asdm68n80kq-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
18211b7eef7d37f9, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM68N80KQ-R
**ASDsemi** · MOSFETs · TO-252
ASDM68N80KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V (VGSS), threshold 2 to 4 V at ID = 250 µA. |
| 2 | D | passive | Drain (shortened middle lead, common with the exposed drain tab); drain-source voltage 68 V, continuous current 80 A at TC = 25ºC. |
| 3 | S | passive | Source; body diode continuous current 80 A and pulsed 320 A at TC = 25ºC. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 68 | V | VGS = 0V | 1 |
| Continuous Drain Current (TC = 25ºC) | ID | | | 80 | A | TC = 25ºC | 1 |
| Continuous Drain Current (TC = 100ºC) | ID | | | 49 | A | TC = 100ºC | 1 |
| Pulsed Drain Current | IDM | | | 280 | A | note1: Repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 79 | mJ | note2: IAS = 42.5A, L=0.3mH, VDD = 50V, RG = 25Ω, Starting TJ = 25 | 1 |
| Avalanche Current | IAS | | | 23 | A | | 1 |
| Power Dissipation (TC = 25ºC) | PD | | | 120 | W | TC = 25ºC; note3: based on TJ(MAX)=175°C, using junction-to-case thermal resistance | 1 |
| Power Dissipation (TC = 100ºC) | PD | | | 60 | W | TC = 100ºC; note3: based on TJ(MAX)=175°C, using junction-to-case thermal resistance | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | ºC | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 68 | | | V | VGS = 0V, ID = 250µA | 2 |
| Zero Gate Voltage Drain Current (TJ = 25ºC) | IDSS | | | 1 | μA | VDS = 68V, VGS = 0V, TJ = 25ºC | 2 |
| Zero Gate Voltage Drain Current (TJ = 100ºC) | IDSS | | | 25 | µA | VDS = 68V, VGS = 0V, TJ = 100ºC | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Drain-Source On-Resistance | RDS(on) | | 7.7 | 9.5 | mΩ | VGS = 10V, ID = 30A | 2 |
| Forward Transconductance | gfs | 17.1 | | | S | VDS = 10V, ID = 30A | 2 |
| Continuous Body Diode Current | IS | | | 80 | A | TC = 25ºC | 2 |
| Pulsed Diode Forward Current | ISM | | | 320 | A | TC = 25ºC | 2 |
| Body Diode Voltage | VSD | | | 1.2 | V | TJ = 25ºC, ISD = 30A, VGS = 0V | 2 |
| Thermal Resistance, Junction-to-Case | RthJC | | 1.4 | | ºC/W | | 1 |
| Thermal Resistance, Junction-to-Ambient | RthJA | | 62 | | ºC/W | | 1 |
## CAD (KiCad official)
- Symbol: `ASDM68N80KQ-R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `asdm68n80kq-r-etched.step` / `asdm68n80kq-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm68n80kq-r.step` / `asdm68n80kq-r.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225827917815808) (7 pp, sha256 `18211b7eef7d37f9`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm68n80kq-r-datasheet.pdf)