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ASDM68N80KQ-R

Public Made by Adom

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ASDsemi MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ASDM68N80KQ-R

ASDsemi · MOSFETs · TO-252

ASDM68N80KQ-R from ASDsemi, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V (VGSS), threshold 2 to 4 V at ID = 250 µA.
2 D passive Drain (shortened middle lead, common with the exposed drain tab); drain-source voltage 68 V, continuous current 80 A at TC = 25ºC.
3 S passive Source; body diode continuous current 80 A and pulsed 320 A at TC = 25ºC.

Key specifications

Parameter Value
Manufacturer ASDsemi
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 68 V VGS = 0V 1
Continuous Drain Current (TC = 25ºC) ID 80 A TC = 25ºC 1
Continuous Drain Current (TC = 100ºC) ID 49 A TC = 100ºC 1
Pulsed Drain Current IDM 280 A note1: Repetitive rating, pulse width limited by maximum junction temperature 1
Gate-Source Voltage VGSS -20 20 V 1
Single Pulse Avalanche Energy EAS 79 mJ note2: IAS = 42.5A, L=0.3mH, VDD = 50V, RG = 25Ω, Starting TJ = 25 1
Avalanche Current IAS 23 A 1
Power Dissipation (TC = 25ºC) PD 120 W TC = 25ºC; note3: based on TJ(MAX)=175°C, using junction-to-case thermal resistance 1
Power Dissipation (TC = 100ºC) PD 60 W TC = 100ºC; note3: based on TJ(MAX)=175°C, using junction-to-case thermal resistance 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 ºC 1
Drain-Source Breakdown Voltage V(BR)DSS 68 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current (TJ = 25ºC) IDSS 1 μA VDS = 68V, VGS = 0V, TJ = 25ºC 2
Zero Gate Voltage Drain Current (TJ = 100ºC) IDSS 25 µA VDS = 68V, VGS = 0V, TJ = 100ºC 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 7.7 9.5 mΩ VGS = 10V, ID = 30A 2
Forward Transconductance gfs 17.1 S VDS = 10V, ID = 30A 2
Continuous Body Diode Current IS 80 A TC = 25ºC 2
Pulsed Diode Forward Current ISM 320 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 30A, VGS = 0V 2
Thermal Resistance, Junction-to-Case RthJC 1.4 ºC/W 1
Thermal Resistance, Junction-to-Ambient RthJA 62 ºC/W 1

CAD (KiCad official)

  • Symbol: ASDM68N80KQ-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: asdm68n80kq-r-etched.step / asdm68n80kq-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asdm68n80kq-r.step / asdm68n80kq-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ASDsemi datasheet (7 pp, sha256 18211b7eef7d37f9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF