ASDM4976S-R

{
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  "slug": "asdm4976s-r",
  "title": "ASDM4976S-R",
  "brief": "ASDsemi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "asdm4976s-r",
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  "component": {
    "mpn": "ASDM4976S-R",
    "manufacturer": "ASDsemi",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588943505339666432",
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    "distributor_links": {
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      "source": "Component Ocean /api/assign-pns",
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    "pins": [
      {
        "number": "1",
        "name": "S1",
        "type": "passive",
        "description": "Source terminal of MOSFET channel 1; the device-level absolute maximum ratings apply (VGS ±20 V)."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
        "description": "Gate terminal of MOSFET channel 1; gate-source voltage is limited to ±20 V per the absolute maximum ratings."
      },
      {
        "number": "3",
        "name": "S2",
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        "description": "Source terminal of MOSFET channel 2; the device-level absolute maximum ratings apply (VGS ±20 V)."
      },
      {
        "number": "4",
        "name": "G2",
        "type": "input",
        "description": "Gate terminal of MOSFET channel 2; gate-source voltage is limited to ±20 V per the absolute maximum ratings."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 2 (tied internally to pin 6); drain-source voltage is rated 60 V (N-channel) / -60 V (P-channel) in the absolute maximum ratings."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 2 (tied internally to pin 5); drain-source voltage is rated 60 V (N-channel) / -60 V (P-channel) in the absolute maximum ratings."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 1 (tied internally to pin 8); drain-source voltage is rated 60 V (N-channel) / -60 V (P-channel) in the absolute maximum ratings."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 1 (tied internally to pin 7); drain-source voltage is rated 60 V (N-channel) / -60 V (P-channel) in the absolute maximum ratings."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
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        "extractor": "extract_pins 0.3",
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        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet gives the SOP-8 top-view pin labels (top row S1 G1 S2 G2, bottom row D1 D1 D2 D2) but ; The datasheet does not explicitly state which channel (N or P) is S1/G1/D1 and which is S2/G2/D2. Ch; The datasheet gives no pin-specific limits for source pins; descriptions reflect only device-level a",
          "1/8 pins cited to the wrong page (name found elsewhere): ['7:D1@p1']"
        ],
        "pages_sent": 12,
        "cost_usd": 0.0469,
        "at": "2026-10-19T04:36:44"
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        "sha256": "cdfb424720de40eb",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "described": 8,
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        "refuses_to_fabricate": true
      }
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      "footprint": "viewers/footprint.html"
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        "zmin_mm": 0,
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        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
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  "metadata": {
    "specs": {
      "Manufacturer": "ASDsemi",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
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          "name": "Maximum Power Dissipation (P-Channel)",
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          "name": "Operating Junction and Storage Temperature Range (N-Channel)",
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          "name": "Drain-Source On-State Resistance (N-Channel)",
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          "conditions": "VGS=10V, ID=4A",
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          "name": "Drain-Source On-State Resistance (P-Channel)",
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          "name": "Drain-Source On-State Resistance (P-Channel)",
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          "name": "Forward Transconductance (P-Channel)",
          "symbol": "gFS",
          "kind": "electrical",
          "unit": "S",
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          "name": "Diode Forward Voltage (N-Channel)",
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          "name": "Diode Forward Voltage (P-Channel)",
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          "symbol": "IS",
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          "min": null,
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          "conditions": "Note 2: surface mounted on FR4 board, t ≤ 10 sec",
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          "name": "Input Capacitance (N-Channel)",
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          "unit": "PF",
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          "source_page": 2,
          "source": "datasheet"
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          "name": "Turn-Off Fall Time (N-Channel)",
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          "name": "Turn-on Rise Time (P-Channel)",
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