# ASDM4406S-R

**ASDsemi** · MOSFETs · SOP-8

ASDM4406S-R from ASDsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to source pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum ±20 V, threshold 1.0 to 2.0 V (typ 1.4 V) at ID=250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 6, 7 and 8; VDS maximum 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 5, 7 and 8; continuous ID 13 A at TA=25°C. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 5, 6 and 8; pulsed IDM 52 A. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 5, 6 and 7; VDS maximum 30 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 13 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 10.4 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 52 | A |  | 1 |
| Avalanche Current | IAS |  |  | 24 | A |  | 1 |
| Avalanche energy | EAS |  |  | 40 | mJ | L=0.1mH | 1 |
| Power Dissipation | PD |  |  | 3.1 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 2 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA |  | 31 | 40 | °C/W | t ≤ 10s | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA |  | 59 | 75 | °C/W | Steady-State | 1 |
| Maximum Junction-to-Lead (Steady-State) | RθJL |  | 16 | 24 | °C/W | Steady-State | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | ID=250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=30V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 30 | µA | VDS=30V, VGS=0V, TJ=85°C | 2 |
| Gate-Body leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 100 |  |  | A | VGS=10V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 9 | 11.5 | mΩ | VGS=10V, ID=12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 14 | 17 | mΩ | TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11.3 | 14 | mΩ | VGS=4.5V, ID=10A | 2 |
| Forward Transconductance | gFS |  | 45 |  | S | VDS=5V, ID=12A | 2 |
| Diode Forward Voltage | VSD |  | 0.75 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 4 | A |  | 2 |
| Input Capacitance | Ciss | 610 | 760 | 910 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | 88 | 125 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 40 | 70 | 100 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance | Rg | 0.8 | 1.6 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 11 | 14 | 17 | nC | VGS=10V, VDS=15V, ID=12A | 2 |
| Total Gate Charge (4.5V) | Qg | 5 | 6.6 | 8 | nC | VGS=4.5V, VDS=15V, ID=12A | 2 |
| Gate Source Charge | Qgs | 1.9 | 2.4 | 2.9 | nC |  | 2 |
| Gate Drain Charge | Qgd | 1.8 | 3 | 4.2 | nC |  | 2 |
| Turn-On DelayTime | tD(on) |  | 4.4 |  | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 9 |  | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 17 |  | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 6 |  | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr | 5.6 | 7 | 8 | ns | IF=12A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 6.4 | 8 | 9.6 | nC | IF=12A, dI/dt=500A/µs | 2 |

## CAD (KiCad official)

- Symbol: `ASDM4406S-R`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `asdm4406s-r-etched.step` / `asdm4406s-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm4406s-r.step` / `asdm4406s-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904097102123008) (8 pp, sha256 `4c09073e5fd4c9f1`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asdm4406s-r-datasheet.pdf)