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ASDM4406S-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM4406S-R
ASDsemi · MOSFETs · SOP-8
ASDM4406S-R from ASDsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to source pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to source pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS maximum ±20 V, threshold 1.0 to 2.0 V (typ 1.4 V) at ID=250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 6, 7 and 8; VDS maximum 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 5, 7 and 8; continuous ID 13 A at TA=25°C. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 5, 6 and 8; pulsed IDM 52 A. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied to drain pins 5, 6 and 7; VDS maximum 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 13 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 10.4 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 52 | A | 1 | |||
| Avalanche Current | IAS | 24 | A | 1 | |||
| Avalanche energy | EAS | 40 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 3.1 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 31 | 40 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 59 | 75 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 16 | 24 | °C/W | Steady-State | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=30V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | µA | VDS=30V, VGS=0V, TJ=85°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 100 | A | VGS=10V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 9 | 11.5 | mΩ | VGS=10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 17 | mΩ | TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 11.3 | 14 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Forward Transconductance | gFS | 45 | S | VDS=5V, ID=12A | 2 | ||
| Diode Forward Voltage | VSD | 0.75 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 | |||
| Input Capacitance | Ciss | 610 | 760 | 910 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Output Capacitance | Coss | 88 | 125 | 160 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 40 | 70 | 100 | pF | VGS=0V, VDS=15V, f=1MHz | 2 |
| Gate resistance | Rg | 0.8 | 1.6 | 2.4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg | 11 | 14 | 17 | nC | VGS=10V, VDS=15V, ID=12A | 2 |
| Total Gate Charge (4.5V) | Qg | 5 | 6.6 | 8 | nC | VGS=4.5V, VDS=15V, ID=12A | 2 |
| Gate Source Charge | Qgs | 1.9 | 2.4 | 2.9 | nC | 2 | |
| Gate Drain Charge | Qgd | 1.8 | 3 | 4.2 | nC | 2 | |
| Turn-On DelayTime | tD(on) | 4.4 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 9 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 17 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 6 | ns | VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 5.6 | 7 | 8 | ns | IF=12A, dI/dt=500A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 6.4 | 8 | 9.6 | nC | IF=12A, dI/dt=500A/µs | 2 |
CAD (KiCad official)
- Symbol:
ASDM4406S-R - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
asdm4406s-r-etched.step/asdm4406s-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm4406s-r.step/asdm4406s-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (8 pp, sha256
4c09073e5fd4c9f1, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).