component
ASDM40N100P-T
Public Made by Adomby adom
Ascend MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ASDM40N100P-T
Ascend · MOSFETs · TO-220
ASDM40N100P-T from Ascend, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a threshold of 1 V min to 2.5 V max. |
| 2 | D | passive | Drain, also connected to the metal tab; drain-source voltage is rated at 40 V and continuous drain current is 100 A at TC=25°C. |
| 3 | S | passive | Source; the body diode continuous forward current is 100 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=40V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | µA | VDS=40V, VGS=0V, TJ=125°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VDS=VGS, IDS=250µA | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, IDS=250µA | 2 | ||
| Drain-Source On-state Resistance | RDS(ON) | 4.6 | 6 | mΩ | VGS=4.5V, IDS=35A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 4 | 4.5 | mΩ | VGS=10V, IDS=50A | 2 | |
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain-Source Voltage | VDSS | 40 | V | 1 | |||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 100 | A | TC=25°C | 1 | ||
| 300µs Pulse Drain Current | IDP | 400 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 100 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 51 | A | TC=100°C | 1 | ||
| Continuous Drain Current | ID | 25 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 19 | A | TA=70°C | 1 | ||
| Maximum Power Dissipation | PD | 65 | W | TC=25°C | 1 | ||
| Maximum Power Dissipation | PD | 26 | W | TC=100°C | 1 | ||
| Maximum Power Dissipation | PD | 4.2 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TA=70°C | 1 | ||
| Avalanche Energy, Single Pulsed | EAS | 121 | mJ | Single pulsed | 1 | ||
| Thermal Resistance-Junction to Case | RJC | 1.44 | °C/W | 1 | |||
| Thermal Resistance-Junction to Ambient | RJA | 62 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
ASDM40N100P-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
asdm40n100p-t-etched.step/asdm40n100p-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm40n100p-t.step/asdm40n100p-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Ascend datasheet (7 pp, sha256
ffcbaaeff066aaf3, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ASDM40N100P-T
**Ascend** · MOSFETs · TO-220
ASDM40N100P-T from Ascend, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a threshold of 1 V min to 2.5 V max. |
| 2 | D | passive | Drain, also connected to the metal tab; drain-source voltage is rated at 40 V and continuous drain current is 100 A at TC=25°C. |
| 3 | S | passive | Source; the body diode continuous forward current is 100 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Leakage Current | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=40V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 30 | µA | VDS=40V, VGS=0V, TJ=125°C | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 2.5 | V | VDS=VGS, IDS=250µA | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 40 | | | V | VGS=0V, IDS=250µA | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 4.6 | 6 | mΩ | VGS=4.5V, IDS=35A | 2 |
| Drain-Source On-state Resistance | RDS(ON) | | 4 | 4.5 | mΩ | VGS=10V, IDS=50A | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 1 |
| Drain-Source Voltage | VDSS | | | 40 | V | | 1 |
| Maximum Junction Temperature | TJ | | | 150 | °C | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |
| Diode Continuous Forward Current | IS | | | 100 | A | TC=25°C | 1 |
| 300µs Pulse Drain Current | IDP | | | 400 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 100 | A | TC=25°C | 1 |
| Continuous Drain Current | ID | | | 51 | A | TC=100°C | 1 |
| Continuous Drain Current | ID | | | 25 | A | TA=25°C | 1 |
| Continuous Drain Current | ID | | | 19 | A | TA=70°C | 1 |
| Maximum Power Dissipation | PD | | | 65 | W | TC=25°C | 1 |
| Maximum Power Dissipation | PD | | | 26 | W | TC=100°C | 1 |
| Maximum Power Dissipation | PD | | | 4.2 | W | TA=25°C | 1 |
| Maximum Power Dissipation | PD | | | 2.7 | W | TA=70°C | 1 |
| Avalanche Energy, Single Pulsed | EAS | | | 121 | mJ | Single pulsed | 1 |
| Thermal Resistance-Junction to Case | RJC | | | 1.44 | °C/W | | 1 |
| Thermal Resistance-Junction to Ambient | RJA | | | 62 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `ASDM40N100P-T`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `asdm40n100p-t-etched.step` / `asdm40n100p-t-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm40n100p-t.step` / `asdm40n100p-t.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Ascend datasheet](docs/asdm40n100p-t-datasheet.pdf) (7 pp, sha256 `ffcbaaeff066aaf3`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/asdm40n100p-t-datasheet.pdf)