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ASDM40N100P-T

Public Made by Adom

by adom

Ascend MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ASDM40N100P-T

Ascend · MOSFETs · TO-220

ASDM40N100P-T from Ascend, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a threshold of 1 V min to 2.5 V max.
2 D passive Drain, also connected to the metal tab; drain-source voltage is rated at 40 V and continuous drain current is 100 A at TC=25°C.
3 S passive Source; the body diode continuous forward current is 100 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Ascend
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=40V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 µA VDS=40V, VGS=0V, TJ=125°C 2
Gate Threshold Voltage VGS(th) 1 2.5 V VDS=VGS, IDS=250µA 2
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, IDS=250µA 2
Drain-Source On-state Resistance RDS(ON) 4.6 6 mΩ VGS=4.5V, IDS=35A 2
Drain-Source On-state Resistance RDS(ON) 4 4.5 mΩ VGS=10V, IDS=50A 2
Gate-Source Voltage VGSS -20 20 V 1
Drain-Source Voltage VDSS 40 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Diode Continuous Forward Current IS 100 A TC=25°C 1
300µs Pulse Drain Current IDP 400 A TC=25°C 1
Continuous Drain Current ID 100 A TC=25°C 1
Continuous Drain Current ID 51 A TC=100°C 1
Continuous Drain Current ID 25 A TA=25°C 1
Continuous Drain Current ID 19 A TA=70°C 1
Maximum Power Dissipation PD 65 W TC=25°C 1
Maximum Power Dissipation PD 26 W TC=100°C 1
Maximum Power Dissipation PD 4.2 W TA=25°C 1
Maximum Power Dissipation PD 2.7 W TA=70°C 1
Avalanche Energy, Single Pulsed EAS 121 mJ Single pulsed 1
Thermal Resistance-Junction to Case RJC 1.44 °C/W 1
Thermal Resistance-Junction to Ambient RJA 62 °C/W 1

CAD (KiCad official)

  • Symbol: ASDM40N100P-T
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: asdm40n100p-t-etched.step / asdm40n100p-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asdm40n100p-t.step / asdm40n100p-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Ascend datasheet (7 pp, sha256 ffcbaaeff066aaf3, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF