component

ASDM12N65F-T

Public Made by Adom

by adom

Ascend MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorasdm12n65f-tfactory-2.0.0extractor-text

Verified ASDM12N65F-T

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ASDM12N65F-T · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-2ery4qza/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ asdm12n65f-t.kicad_sym✓ asdm12n65f-t.kicad_mod✓ asdm12n65f-t.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
asdm12n65f-t / README.md
History Download
Ray Publish 0.1.0 97d0012 1d ago

ASDM12N65F-T

Ascend · MOSFETs · TO-220F

ASDM12N65F-T from Ascend, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the datasheet gives gate-to-source voltage of ±30 V maximum with a gate threshold of 2.5 V min to 4.5 V max at ID=250uA.
2 D passive Drain; the datasheet gives drain-to-source voltage of 650 V maximum and continuous drain current of 12 A at TC=25oC.
3 S passive Source; the datasheet gives continuous body-diode source current of 12 A maximum and pulsed source current of 48 A maximum.

Key specifications

Parameter Value
Manufacturer Ascend
Package TO-220F
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS 650 V 1
Continuous Drain Current (TC=25oC) ID 12 A TC=25oC 1
Continuous Drain Current (TC=100oC) ID 7.5 A TC=100oC 1
Drain current pulsed IDM 48 A Repetitive rating: pulse width limited by junction temperature 1
Gate to Source Voltage VGS -30 30 V 1
Single pulsed Avalanche Energy EAS 576 mJ L=8mH, IAS=12A, VDD=50V, RG=25Ω, Starting at TJ=25oC 1
Peak diode Recovery dv/dt dv/dt 5 V/ns ISD ≤ ID, di/dt=100A/us, VDD ≤ BVDSS, Starting at TJ=25oC 1
Total power dissipation (TC=25oC) PD 24 W TC=25oC 1
Derating Factor above 25oC 0.19 W/oC above 25oC 1
Operating Junction Temperature & Storage Temperature TSTG, TJ -55 150 oC 1
Maximum lead temperature for soldering purpose TL 260 oC 1
Thermal resistance, Junction to case (Maximum) Rthjc 2.1 oC/W 1
Thermal resistance, Junction to ambient (Maximum) Rthja 62 oC/W 1
Drain to source breakdown voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain to source leakage current IDSS 1 uA VDS=650V, VGS=0V 2
Drain to source leakage current IDSS 50 uA VDS=520V, TC=125oC 2
Gate to source leakage current, forward IGSS 100 nA VGS=30V, VDS=0V 2
Gate to source leakage current, reverse IGSS -100 nA VGS=-30V, VDS=0V 2
Gate threshold voltage VGS(TH) 2.5 3.5 4.5 V VDS=VGS, ID=250uA 2
Drain to source on state resistance RDS(ON) 0.65 0.8 Ω VGS=10V, ID=6A 2
Continuous source current IS 12 A Integral reverse p-n Junction diode in the MOSFET 2
Pulsed source current ISM 48 A 2
Diode forward voltage drop VSD 1.3 V IS=12A, VGS=0V 2
Breakdown voltage temperature coefficient ΔBVDSS/ΔTJ 0.65 V/oC ID=250uA, referenced to 25oC 2
Forward Transconductance Gfs 9.6 S VDS=30V, ID=6A 2
Input capacitance Ciss 1890 pF VGS=0V, VDS=25V, f=1MHz 2
Output capacitance Coss 144 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse transfer capacitance Crss 9.9 pF VGS=0V, VDS=25V, f=1MHz 2
Turn on delay time td(on) 33 ns VDS=325V, ID=12A, RG=25Ω, VGS=10V 2
Rising time tr 41 ns VDS=325V, ID=12A, RG=25Ω, VGS=10V 2
Turn off delay time td(off) 102 ns VDS=325V, ID=12A, RG=25Ω, VGS=10V 2
Fall time tf 37 ns VDS=325V, ID=12A, RG=25Ω, VGS=10V 2
Total gate charge Qg 38 nC VDS=520V, VGS=10V, ID=12A 2
Gate-source charge Qgs 9 nC VDS=520V, VGS=10V, ID=12A 2
Gate-drain charge Qgd 13 nC VDS=520V, VGS=10V, ID=12A 2
Gate Resistance Rg 1.4 Ω VDS=0V, Scan F mode 2
Reverse recovery time Trr 480 ns IS=12A, VGS=0V, dIF/dt=100A/us 2
Reverse recovery Charge Qrr 4.5 uC IS=12A, VGS=0V, dIF/dt=100A/us 2
Peak Reverse Recovery Current Irrm 18.5 A IS=12A, dIF/dt=100A/us 2

CAD (KiCad official)

  • Symbol: ASDM12N65F-T
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Ascend datasheet (9 pp, sha256 d3f54f069a7be220, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF