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ASDM12N65F-T
Public Made by Adomby adom
Ascend MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM12N65F-T
Ascend · MOSFETs · TO-220F
ASDM12N65F-T from Ascend, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the datasheet gives gate-to-source voltage of ±30 V maximum with a gate threshold of 2.5 V min to 4.5 V max at ID=250uA. |
| 2 | D | passive | Drain; the datasheet gives drain-to-source voltage of 650 V maximum and continuous drain current of 12 A at TC=25oC. |
| 3 | S | passive | Source; the datasheet gives continuous body-diode source current of 12 A maximum and pulsed source current of 48 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-220F |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 650 | V | 1 | |||
| Continuous Drain Current (TC=25oC) | ID | 12 | A | TC=25oC | 1 | ||
| Continuous Drain Current (TC=100oC) | ID | 7.5 | A | TC=100oC | 1 | ||
| Drain current pulsed | IDM | 48 | A | Repetitive rating: pulse width limited by junction temperature | 1 | ||
| Gate to Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single pulsed Avalanche Energy | EAS | 576 | mJ | L=8mH, IAS=12A, VDD=50V, RG=25Ω, Starting at TJ=25oC | 1 | ||
| Peak diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD ≤ ID, di/dt=100A/us, VDD ≤ BVDSS, Starting at TJ=25oC | 1 | ||
| Total power dissipation (TC=25oC) | PD | 24 | W | TC=25oC | 1 | ||
| Derating Factor above 25oC | 0.19 | W/oC | above 25oC | 1 | |||
| Operating Junction Temperature & Storage Temperature | TSTG, TJ | -55 | 150 | oC | 1 | ||
| Maximum lead temperature for soldering purpose | TL | 260 | oC | 1 | |||
| Thermal resistance, Junction to case (Maximum) | Rthjc | 2.1 | oC/W | 1 | |||
| Thermal resistance, Junction to ambient (Maximum) | Rthja | 62 | oC/W | 1 | |||
| Drain to source breakdown voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Drain to source leakage current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Drain to source leakage current | IDSS | 50 | uA | VDS=520V, TC=125oC | 2 | ||
| Gate to source leakage current, forward | IGSS | 100 | nA | VGS=30V, VDS=0V | 2 | ||
| Gate to source leakage current, reverse | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate threshold voltage | VGS(TH) | 2.5 | 3.5 | 4.5 | V | VDS=VGS, ID=250uA | 2 |
| Drain to source on state resistance | RDS(ON) | 0.65 | 0.8 | Ω | VGS=10V, ID=6A | 2 | |
| Continuous source current | IS | 12 | A | Integral reverse p-n Junction diode in the MOSFET | 2 | ||
| Pulsed source current | ISM | 48 | A | 2 | |||
| Diode forward voltage drop | VSD | 1.3 | V | IS=12A, VGS=0V | 2 | ||
| Breakdown voltage temperature coefficient | ΔBVDSS/ΔTJ | 0.65 | V/oC | ID=250uA, referenced to 25oC | 2 | ||
| Forward Transconductance | Gfs | 9.6 | S | VDS=30V, ID=6A | 2 | ||
| Input capacitance | Ciss | 1890 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Output capacitance | Coss | 144 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 9.9 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Turn on delay time | td(on) | 33 | ns | VDS=325V, ID=12A, RG=25Ω, VGS=10V | 2 | ||
| Rising time | tr | 41 | ns | VDS=325V, ID=12A, RG=25Ω, VGS=10V | 2 | ||
| Turn off delay time | td(off) | 102 | ns | VDS=325V, ID=12A, RG=25Ω, VGS=10V | 2 | ||
| Fall time | tf | 37 | ns | VDS=325V, ID=12A, RG=25Ω, VGS=10V | 2 | ||
| Total gate charge | Qg | 38 | nC | VDS=520V, VGS=10V, ID=12A | 2 | ||
| Gate-source charge | Qgs | 9 | nC | VDS=520V, VGS=10V, ID=12A | 2 | ||
| Gate-drain charge | Qgd | 13 | nC | VDS=520V, VGS=10V, ID=12A | 2 | ||
| Gate Resistance | Rg | 1.4 | Ω | VDS=0V, Scan F mode | 2 | ||
| Reverse recovery time | Trr | 480 | ns | IS=12A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Reverse recovery Charge | Qrr | 4.5 | uC | IS=12A, VGS=0V, dIF/dt=100A/us | 2 | ||
| Peak Reverse Recovery Current | Irrm | 18.5 | A | IS=12A, dIF/dt=100A/us | 2 |
CAD (KiCad official)
- Symbol:
ASDM12N65F-T - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Ascend datasheet (9 pp, sha256
d3f54f069a7be220, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).