# ASA65R550E

**ANHI** · MOSFETs · TO-220F

ASA65R550E from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, easy-to-control gate switching input with enhancement-mode threshold VGS(th) of 2.8 to 4.2 V and static VGS limit of ±20 V. |
| 2 | D | passive | Drain, with drain-source breakdown voltage of 655 V min (VGS=0V, ID=10mA) and continuous drain current of 8 A at TC=25°C. |
| 3 | S | passive | Source, main current return terminal of the N-channel MOSFET, also the body diode anode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 8 | A | TC=25°C | 2 |
| Pulsed drain current | ID,pulse |  |  | 40 | A | TC=25°C | 2 |
| Avalanche energy, single pulse | EAS |  |  | 624 | mJ | VDD=50V; L=49.9mH | 2 |
| Avalanche energy, repetitive | EAR |  |  | 123 | mJ | VDD=50V; L=49.9mH | 2 |
| Avalanche current, single pulse | IAS |  |  | 5 | A |  | 2 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 11 | V/ns | VDS=0...150V | 2 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static; | 2 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 2 |
| Power dissipation | Ptot |  |  | 178.1 | W | TC=25°C | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Operating junction temperature | Tj | -55 |  | 150 | °C |  | 2 |
| Continuous diode forward current | IS |  |  | 48 | A | TC=25°C | 2 |
| Diode pulse current | IS,pulse |  |  | 151 | A | TC=25°C | 2 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25°C | 2 |
| Maximum diode commutation speed | diF/dt |  |  | 50 | A/s | VDS=0...400V, ISD<=48A, Tj=25°C | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 655 |  |  | V | VGS=0V, ID=10mA | 4 |
| Gate threshold voltage | V(GS)th | 2.8 |  | 4.2 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | nA | VDS=650V, VGS=0V, Tj=25°C | 4 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 0.5 | 0.55 | Ω | VGS=10V, ID=4A, Tj=25°C | 4 |
| Thermal resistance, junction - case (TO220 FullPAK) | RthJC |  |  | 3.65 | °C/W |  | 3 |
| Thermal resistance, junction - ambient (TO220 FullPAK) | RthJA |  |  | 80 | °C/W | device on PCB, minimal footprint | 3 |

## CAD (KiCad official)

- Symbol: `ASA65R550E`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ANHI datasheet](docs/asa65r550e-datasheet.pdf) (10 pp, sha256 `b81f0cc1e2a8a62b`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asa65r550e-datasheet.pdf)