component
ASA65R550E
Public Made by Adomby adom
ANHI MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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ASA65R550E
ANHI · MOSFETs · TO-220F
ASA65R550E from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, easy-to-control gate switching input with enhancement-mode threshold VGS(th) of 2.8 to 4.2 V and static VGS limit of ±20 V. |
| 2 | D | passive | Drain, with drain-source breakdown voltage of 655 V min (VGS=0V, ID=10mA) and continuous drain current of 8 A at TC=25°C. |
| 3 | S | passive | Source, main current return terminal of the N-channel MOSFET, also the body diode anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 8 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 40 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 624 | mJ | VDD=50V; L=49.9mH | 2 | ||
| Avalanche energy, repetitive | EAR | 123 | mJ | VDD=50V; L=49.9mH | 2 | ||
| Avalanche current, single pulse | IAS | 5 | A | 2 | |||
| MOSFET dv/dt ruggedness | dv/dt | 11 | V/ns | VDS=0...150V | 2 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static; | 2 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 2 | |
| Power dissipation | Ptot | 178.1 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Continuous diode forward current | IS | 48 | A | TC=25°C | 2 | ||
| Diode pulse current | IS,pulse | 151 | A | TC=25°C | 2 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=48A, Tj=25°C | 2 | ||
| Maximum diode commutation speed | diF/dt | 50 | A/s | VDS=0...400V, ISD<=48A, Tj=25°C | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=10mA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.8 | 4.2 | V | VDS=VGS, ID=250uA | 4 | |
| Zero gate voltage drain current | IDSS | 100 | nA | VDS=650V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.5 | 0.55 | Ω | VGS=10V, ID=4A, Tj=25°C | 4 | |
| Thermal resistance, junction - case (TO220 FullPAK) | RthJC | 3.65 | °C/W | 3 | |||
| Thermal resistance, junction - ambient (TO220 FullPAK) | RthJA | 80 | °C/W | device on PCB, minimal footprint | 3 |
CAD (KiCad official)
- Symbol:
ASA65R550E - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (10 pp, sha256
b81f0cc1e2a8a62b, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).