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ASA65R550E

ANHI · MOSFETs · TO-220F

ASA65R550E from ANHI, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate, easy-to-control gate switching input with enhancement-mode threshold VGS(th) of 2.8 to 4.2 V and static VGS limit of ±20 V.
2 D passive Drain, with drain-source breakdown voltage of 655 V min (VGS=0V, ID=10mA) and continuous drain current of 8 A at TC=25°C.
3 S passive Source, main current return terminal of the N-channel MOSFET, also the body diode anode.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 8 A TC=25°C 2
Pulsed drain current ID,pulse 40 A TC=25°C 2
Avalanche energy, single pulse EAS 624 mJ VDD=50V; L=49.9mH 2
Avalanche energy, repetitive EAR 123 mJ VDD=50V; L=49.9mH 2
Avalanche current, single pulse IAS 5 A 2
MOSFET dv/dt ruggedness dv/dt 11 V/ns VDS=0...150V 2
Gate source voltage (static) VGS -20 20 V static; 2
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 2
Power dissipation Ptot 178.1 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Continuous diode forward current IS 48 A TC=25°C 2
Diode pulse current IS,pulse 151 A TC=25°C 2
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=48A, Tj=25°C 2
Maximum diode commutation speed diF/dt 50 A/s VDS=0...400V, ISD<=48A, Tj=25°C 2
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=10mA 4
Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 100 nA VDS=650V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.5 0.55 Ω VGS=10V, ID=4A, Tj=25°C 4
Thermal resistance, junction - case (TO220 FullPAK) RthJC 3.65 °C/W 3
Thermal resistance, junction - ambient (TO220 FullPAK) RthJA 80 °C/W device on PCB, minimal footprint 3

CAD (KiCad official)

  • Symbol: ASA65R550E
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (10 pp, sha256 b81f0cc1e2a8a62b, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF