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AQ1210-01ETG-HXY

Public Made by Adom

by adom

HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AQ1210-01ETG-HXY

HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

AQ1210-01ETG-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 1 passive Terminal 1 of the bi-directional ESD protection diode (5V working voltage, ±25kV IEC61000-4-2), connected to the protected line.
2 2 passive Terminal 2 of the bi-directional ESD protection diode (5V working voltage, ±25kV IEC61000-4-2), connected to the protected line or ground reference.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Stand-off Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 6 V IT=1mA 2
Reverse Leakage Current IR 1 uA VRWM=5.0v 2
Clamping Voltage VC 9 V IPP=1A;tp=8/20us 2
Clamping Voltage VC 10 V IPP=15A;tp=8/20us 2
Junction Capacitance CJ 25 pF VR=0V;f=1MHz 2
Peak pulse power Ppk 150 W tp=8/20us @25 °C 2
ESD (IEC61000-4-2 air discharge) VESD -25 25 kV @25 °C 2
ESD (IEC61000-4-2 contact discharge) VESD -25 25 kV @25 °C 2
Junction temperature TJ 150 °C 2
Operating temperature TOP -55 150 °C 2
Storage temperature TSTG -55 150 °C 2
Lead temperature TL 260 °C 2

CAD (KiCad official)

  • Symbol: AQ1210-01ETG-HXY
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: aq1210-01etg-hxy-etched.step / aq1210-01etg-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aq1210-01etg-hxy.step / aq1210-01etg-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 3bcc3a9b3ae145ef, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF