component
AQ1210-01ETG-HXY
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAQ1210-01ETG-HXY
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
AQ1210-01ETG-HXY from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Terminal 1 of the bi-directional ESD protection diode (5V working voltage, ±25kV IEC61000-4-2), connected to the protected line. |
| 2 | 2 | passive | Terminal 2 of the bi-directional ESD protection diode (5V working voltage, ±25kV IEC61000-4-2), connected to the protected line or ground reference. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Stand-off Voltage | VRWM | 5 | V | 2 | |||
| Reverse Breakdown Voltage | VBR | 6 | V | IT=1mA | 2 | ||
| Reverse Leakage Current | IR | 1 | uA | VRWM=5.0v | 2 | ||
| Clamping Voltage | VC | 9 | V | IPP=1A;tp=8/20us | 2 | ||
| Clamping Voltage | VC | 10 | V | IPP=15A;tp=8/20us | 2 | ||
| Junction Capacitance | CJ | 25 | pF | VR=0V;f=1MHz | 2 | ||
| Peak pulse power | Ppk | 150 | W | tp=8/20us @25 °C | 2 | ||
| ESD (IEC61000-4-2 air discharge) | VESD | -25 | 25 | kV | @25 °C | 2 | |
| ESD (IEC61000-4-2 contact discharge) | VESD | -25 | 25 | kV | @25 °C | 2 | |
| Junction temperature | TJ | 150 | °C | 2 | |||
| Operating temperature | TOP | -55 | 150 | °C | 2 | ||
| Storage temperature | TSTG | -55 | 150 | °C | 2 | ||
| Lead temperature | TL | 260 | °C | 2 |
CAD (KiCad official)
- Symbol:
AQ1210-01ETG-HXY - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
aq1210-01etg-hxy-etched.step/aq1210-01etg-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aq1210-01etg-hxy.step/aq1210-01etg-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
3bcc3a9b3ae145ef, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).