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APM2300AAC-TRL-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

APM2300AAC-TRL-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with a gate-source voltage limit of ±12 V and a threshold of 0.45 V min to 1.0 V max at ID = 250 µA.
2 S passive Source of the N-channel MOSFET, with continuous source-drain body diode current of 1.75 A at TC = 25 °C.
3 D passive Drain of the N-channel MOSFET, rated for VDS of 20 V and pulsed drain current of 20 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 0.45 1 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 8 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (70 °C) IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 70 °C 2
On-State Drain Current ID(on) 20 A VDS ≤ 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.022 Ω VGS = 4.5 V, ID = 5.0 A 2
Drain-Source On-State Resistance RDS(on) 0.028 Ω VGS = 2.5 V, ID = 4.7 A 2
Drain-Source On-State Resistance RDS(on) 0.039 Ω VGS = 1.8 V, ID = 4.3 A 2
Total Gate Charge Qg 12 18 nC VDS = 10 V, VGS = 5 V, ID = 5.0 A 2
Total Gate Charge Qg 8.8 14 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate Resistance Rg 0.5 2.4 4.8 Ω f = 1 MHz 2
Rise Time tr 17 26 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 31 47 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 13 20 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 21 32 ns VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.75 1.2 V IS = 4 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 12 20 ns IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Pulse Diode Forward Current ISM 20 A 2
Continuous Source-Drain Diode Current IS 1.75 A TC = 25 °C 2
Drain-Source Voltage VDS 20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Continuous Drain Current ID 6 A TC = 25 °C, TJ = 150 °C 1
Continuous Drain Current ID 5.1 A TC = 70 °C, TJ = 150 °C 1
Pulsed Drain Current IDM 20 A 1
Maximum Power Dissipation PD 2.1 W TC = 25 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Maximum Junction-to-Ambient RthJA 80 100 °C/W t ≤ 5 s 1
Maximum Junction-to-Foot (Drain) RthJF 40 60 °C/W Steady State 1
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/TJ 25 mV/°C ID = 250 µA 2
Gate Threshold Voltage Temperature Coefficient ΔVGS(th)/TJ -2.6 mV/°C ID = 250 µA 2
Forward Transconductance gfs 24 S VDS = 10 V, ID = 5.0 A 2
Input Capacitance Ciss 865 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 105 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 55 pF VDS = 10 V, VGS = 0 V, f = 1 MHz 2
Gate-Source Charge Qgs 1.1 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2
Gate-Drain Charge Qgd 0.7 nC VDS = 10 V, VGS = 4.5 V, ID = 5.0 A 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: APM2300AAC-TRL-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: apm2300aac-trl-vb-etched.step / apm2300aac-trl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apm2300aac-trl-vb.step / apm2300aac-trl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 9c4fff97f2fcd7d3, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF