component
APM2300AAC-TRL-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
APM2300AAC-TRL-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
APM2300AAC-TRL-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, with a gate-source voltage limit of ±12 V and a threshold of 0.45 V min to 1.0 V max at ID = 250 µA. |
| 2 | S | passive | Source of the N-channel MOSFET, with continuous source-drain body diode current of 1.75 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET, rated for VDS of 20 V and pulsed drain current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (70 °C) | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.022 | Ω | VGS = 4.5 V, ID = 5.0 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.028 | Ω | VGS = 2.5 V, ID = 4.7 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.039 | Ω | VGS = 1.8 V, ID = 4.3 A | 2 | ||
| Total Gate Charge | Qg | 12 | 18 | nC | VDS = 10 V, VGS = 5 V, ID = 5.0 A | 2 | |
| Total Gate Charge | Qg | 8.8 | 14 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 | |
| Gate Resistance | Rg | 0.5 | 2.4 | 4.8 | Ω | f = 1 MHz | 2 |
| Rise Time | tr | 17 | 26 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 31 | 47 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 21 | 32 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | 0.75 | 1.2 | V | IS = 4 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 12 | 20 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Pulse Diode Forward Current | ISM | 20 | A | 2 | |||
| Continuous Source-Drain Diode Current | IS | 1.75 | A | TC = 25 °C | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 6 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current | ID | 5.1 | A | TC = 70 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Maximum Power Dissipation | PD | 2.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.25 | W | TA = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 260 | °C | 1 | ||||
| Maximum Junction-to-Ambient | RthJA | 80 | 100 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 40 | 60 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔVDS/TJ | 25 | mV/°C | ID = 250 µA | 2 | ||
| Gate Threshold Voltage Temperature Coefficient | ΔVGS(th)/TJ | -2.6 | mV/°C | ID = 250 µA | 2 | ||
| Forward Transconductance | gfs | 24 | S | VDS = 10 V, ID = 5.0 A | 2 | ||
| Input Capacitance | Ciss | 865 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 105 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 1.1 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 | ||
| Gate-Drain Charge | Qgd | 0.7 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
APM2300AAC-TRL-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
apm2300aac-trl-vb-etched.step/apm2300aac-trl-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);apm2300aac-trl-vb.step/apm2300aac-trl-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
9c4fff97f2fcd7d3, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).