# AP9T16AGH-HF

**APEC Advanced Power Elec** · MOSFETs · TO-252

AP9T16AGH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; capable of 2.5V gate drive, with gate-source voltage limited to ±12V and threshold of 0.3 to 1.2V. |
| 2 | D | passive | Drain; drain-source voltage rating 20V, continuous drain current 19.5A at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode, with a forward diode drop of 1.2V max at IS=12A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 12 | V |  | 1 |
| Drain Current, VGS @ 4.5V | ID@TC=25℃ |  |  | 19.5 | A |  | 1 |
| Drain Current, VGS @ 4.5V | ID@TC=100℃ |  |  | 12.3 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 80 | A |  | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 12.5 | W |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2 | W |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c |  |  | 10 | ℃/W |  | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a |  |  | 62.5 | ℃/W | PCB mount | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 20 | mΩ | VGS=4.5V, ID=12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 30 | mΩ | VGS=2.5V, ID=10A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.3 |  | 1.2 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | uA | VDS=16V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VGS=+12V, VDS=0V | 2 |
| Total Gate Charge | Qg |  | 16 | 25.6 | nC | ID=12A | 2 |
| Input Capacitance | Ciss |  | 1300 | 2080 | pF | VGS=0V | 2 |
| Gate Resistance | Rg | 0.65 | 1.3 | 2.6 | Ω | f=1.0MHz | 2 |
| Forward On Voltage | VSD |  |  | 1.2 | V | IS=12A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `AP9T16AGH-HF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ap9t16agh-hf-etched.step` / `ap9t16agh-hf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap9t16agh-hf.step` / `ap9t16agh-hf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588903877000744960) (5 pp, sha256 `f375136fa15b3f10`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ap9t16agh-hf-datasheet.pdf)