component
AP9T16AGH-HF
Public Made by Adomby adom
APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| ap9t16agh-hf-etched.glb | 16d ago |
| ap9t16agh-hf-etched.step | 16d ago |
| ap9t16agh-hf-hero.glb | 16d ago |
| ap9t16agh-hf-hero.overlay.json | 16d ago |
| ap9t16agh-hf.glb | 16d ago |
| ap9t16agh-hf.kicad_mod | 16d ago |
| ap9t16agh-hf.kicad_sym | 16d ago |
| ap9t16agh-hf.lbr | 16d ago |
| ap9t16agh-hf.step | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
AP9T16AGH-HF
APEC Advanced Power Elec · MOSFETs · TO-252
AP9T16AGH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; capable of 2.5V gate drive, with gate-source voltage limited to ±12V and threshold of 0.3 to 1.2V. |
| 2 | D | passive | Drain; drain-source voltage rating 20V, continuous drain current 19.5A at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode, with a forward diode drop of 1.2V max at IS=12A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | 12 | V | 1 | |||
| Drain Current, VGS @ 4.5V | ID@TC=25℃ | 19.5 | A | 1 | |||
| Drain Current, VGS @ 4.5V | ID@TC=100℃ | 12.3 | A | 1 | |||
| Pulsed Drain Current | IDM | 80 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 12.5 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 10 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | PCB mount | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 20 | mΩ | VGS=4.5V, ID=12A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 30 | mΩ | VGS=2.5V, ID=10A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.3 | 1.2 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 10 | uA | VDS=16V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+12V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 16 | 25.6 | nC | ID=12A | 2 | |
| Input Capacitance | Ciss | 1300 | 2080 | pF | VGS=0V | 2 | |
| Gate Resistance | Rg | 0.65 | 1.3 | 2.6 | Ω | f=1.0MHz | 2 |
| Forward On Voltage | VSD | 1.2 | V | IS=12A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
AP9T16AGH-HF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap9t16agh-hf-etched.step/ap9t16agh-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap9t16agh-hf.step/ap9t16agh-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (5 pp, sha256
f375136fa15b3f10, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).