component
AP9567GH
Public Made by Adomby adom
APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP9567GH
APEC Advanced Power Elec · MOSFETs · TO-252
AP9567GH from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage rating is ±25V with threshold VGS(th) of -1 to -3V. |
| 2 | D | passive | Drain of the P-channel MOSFET; VDS rated -40V and continuous drain current -22A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode forward voltage max -1.2V at IS=-15A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance (VGS=-10V) | RDS(ON) | 50 | mΩ | VGS=-10V, ID=-15A | 2 | ||
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | 70 | mΩ | VGS=-4.5V, ID=-8A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-40V, VGS=0V | 2 | ||
| Drain-Source Leakage Current (Tj=125℃) | IDSS | -250 | uA | VDS=-32V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+25V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 12 | 19 | nC | ID=-15A | 2 | |
| Input Capacitance | Ciss | 880 | 1400 | pF | VGS=0V | 2 | |
| Gate Resistance | Rg | 5 | 8 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage (source-drain diode) | VSD | -1.2 | V | IS=-15A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | -40 | V | @Tj=25℃ unless otherwise specified | 1 | ||
| Gate-Source Voltage | VGS | 25 | V | @Tj=25℃ unless otherwise specified | 1 | ||
| Drain Current, VGS @ 10V (TC=25℃) | ID@TC=25℃ | -22 | A | VGS @ 10V | 1 | ||
| Drain Current, VGS @ 10V (TC=100℃) | ID@TC=100℃ | -14 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | -50 | A | Pulse width limited by max. junction temperature | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 34.7 | W | TC=25℃ | 1 | ||
| Linear Derating Factor | 0.28 | W/℃ | 1 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 3.6 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | 62.5 | ℃/W | PCB mount, surface mounted on 1 in2 copper pad of FR4 board | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 110 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AP9567GH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap9567gh-etched.step/ap9567gh-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap9567gh.step/ap9567gh.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (7 pp, sha256
e5c1079e6ebb3131, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP9567GH
**APEC Advanced Power Elec** · MOSFETs · TO-252
AP9567GH from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage rating is ±25V with threshold VGS(th) of -1 to -3V. |
| 2 | D | passive | Drain of the P-channel MOSFET; VDS rated -40V and continuous drain current -22A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode forward voltage max -1.2V at IS=-15A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance (VGS=-10V) | RDS(ON) | | | 50 | mΩ | VGS=-10V, ID=-15A | 2 |
| Static Drain-Source On-Resistance (VGS=-4.5V) | RDS(ON) | | | 70 | mΩ | VGS=-4.5V, ID=-8A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-40V, VGS=0V | 2 |
| Drain-Source Leakage Current (Tj=125℃) | IDSS | | | -250 | uA | VDS=-32V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+25V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 12 | 19 | nC | ID=-15A | 2 |
| Input Capacitance | Ciss | | 880 | 1400 | pF | VGS=0V | 2 |
| Gate Resistance | Rg | | 5 | 8 | Ω | f=1.0MHz | 2 |
| Forward On Voltage (source-drain diode) | VSD | | | -1.2 | V | IS=-15A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | -40 | V | @Tj=25℃ unless otherwise specified | 1 |
| Gate-Source Voltage | VGS | | | 25 | V | @Tj=25℃ unless otherwise specified | 1 |
| Drain Current, VGS @ 10V (TC=25℃) | ID@TC=25℃ | | | -22 | A | VGS @ 10V | 1 |
| Drain Current, VGS @ 10V (TC=100℃) | ID@TC=100℃ | | | -14 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | -50 | A | Pulse width limited by max. junction temperature | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 34.7 | W | TC=25℃ | 1 |
| Linear Derating Factor | | | 0.28 | | W/℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c | | | 3.6 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | | | 62.5 | ℃/W | PCB mount, surface mounted on 1 in2 copper pad of FR4 board | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 110 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `AP9567GH`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ap9567gh-etched.step` / `ap9567gh-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap9567gh.step` / `ap9567gh.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590454832294768640) (7 pp, sha256 `e5c1079e6ebb3131`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap9567gh-datasheet.pdf)