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AP9434GM-HF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP9434GM-HF-VB

VBsemi Elec · MOSFETs · SO-8

AP9434GM-HF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 5.1 A at TC = 25 °C.
2 S passive Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 5.1 A at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 5.1 A at TC = 25 °C.
4 G input Gate terminal; the gate-source voltage is rated ±16 V (absolute maximum) and the gate threshold VGS(th) is 1.0 to 2.1 V at ID = 250 µA.
5 D passive Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).
6 D passive Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).
7 D passive Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).
8 D passive Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -16 16 V 1
Continuous Drain Current ID 20 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 18.2 A TC = 70 °C 1
Continuous Drain Current ID 15.2 A TA = 25 °C 1
Continuous Drain Current ID 12.1 A TA = 70 °C 1
Pulsed Drain Current IDM 50 A 1
Continuous Source-Drain Diode Current IS 5.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.2 A TA = 25 °C 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH 1
Avalanche Energy EAS 45 mJ 1
Maximum Power Dissipation PD 5.7 W TC = 25 °C 1
Maximum Power Dissipation PD 3.6 W TC = 70 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C 1
Maximum Power Dissipation PD 1.6 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient thermal resistance RthJA 39 50 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient thermal resistance RthJA 85 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) thermal resistance RthJF 18 22 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 20 V VGS = 0 V, ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1 2.1 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±16 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 30 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.0049 Ω VGS = 4.5 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 0.0056 Ω VGS = 2.5 V, ID = 7 A 2
Gate Resistance Rg 0.15 0.7 1.4 Ω f = 1 MHz 2
Total Gate Charge Qg 62 95 nC VDS = 10 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 27.5 42 nC VDS = 10 V, VGS = 4.5 V, ID = 10 A 2
Turn-On Delay Time td(on) 30 55 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 13 25 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 60 100 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 30 55 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 13 25 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 9 18 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 38 65 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 5.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 50 A 2
Body Diode Voltage VSD 0.71 1.1 V IS = 2 A 2
Body Diode Reverse Recovery Time trr 26 50 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 16 30 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: AP9434GM-HF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ap9434gm-hf-vb-etched.step / ap9434gm-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap9434gm-hf-vb.step / ap9434gm-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 6c738c0ae1311e98, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF