Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗

Loads when you scroll to it. Unloads after 5 minutes in the background.

Download PDF

Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

AP9434GM-HF-VB

VBsemi Elec · MOSFETs · SO-8

AP9434GM-HF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 5.1 A at TC = 25 °C.
2	S	passive	Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 5.1 A at TC = 25 °C.
3	S	passive	Source terminal of the N-channel MOSFET; the source-drain diode continuous current IS is rated 5.1 A at TC = 25 °C.
4	G	input	Gate terminal; the gate-source voltage is rated ±16 V (absolute maximum) and the gate threshold VGS(th) is 1.0 to 2.1 V at ID = 250 µA.
5	D	passive	Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).
6	D	passive	Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).
7	D	passive	Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).
8	D	passive	Drain terminal; the drain-source voltage is rated 20 V and the continuous drain current is 15.2 A at TA = 25 °C (surface mounted, t ≤ 10 s).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Transistors/Thyristors
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			20	V		1
Gate-Source Voltage	VGS	-16		16	V		1
Continuous Drain Current	ID			20	A	TC = 25 °C (TJ = 150 °C)	1
Continuous Drain Current	ID			18.2	A	TC = 70 °C	1
Continuous Drain Current	ID			15.2	A	TA = 25 °C	1
Continuous Drain Current	ID			12.1	A	TA = 70 °C	1
Pulsed Drain Current	IDM			50	A		1
Continuous Source-Drain Diode Current	IS			5.1	A	TC = 25 °C	1
Continuous Source-Drain Diode Current	IS			2.2	A	TA = 25 °C	1
Single Pulse Avalanche Current	IAS			30	A	L = 0.1 mH	1
Avalanche Energy	EAS			45	mJ		1
Maximum Power Dissipation	PD			5.7	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3.6	W	TC = 70 °C	1
Maximum Power Dissipation	PD			2.5	W	TA = 25 °C	1
Maximum Power Dissipation	PD			1.6	W	TA = 70 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Maximum Junction-to-Ambient thermal resistance	RthJA		39	50	°C/W	t ≤ 10 s	1
Maximum Junction-to-Ambient thermal resistance	RthJA			85	°C/W	Steady state (note d)	1
Maximum Junction-to-Foot (Drain) thermal resistance	RthJF		18	22	°C/W	Steady state	1
Drain-Source Breakdown Voltage	VDS	20			V	VGS = 0 V, ID = 250 µA	2
Gate-Source Threshold Voltage	VGS(th)	1		2.1	V	VDS = VGS, ID = 250 µA	2
Gate-Source Leakage	IGSS	-100		100	nA	VDS = 0 V, VGS = ±16 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 20 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			10	µA	VDS = 20 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current	ID(on)	30			A	VDS ≥ 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.0049	Ω	VGS = 4.5 V, ID = 10 A	2
Drain-Source On-State Resistance	RDS(on)			0.0056	Ω	VGS = 2.5 V, ID = 7 A	2
Gate Resistance	Rg	0.15	0.7	1.4	Ω	f = 1 MHz	2
Total Gate Charge	Qg		62	95	nC	VDS = 10 V, VGS = 10 V, ID = 10 A	2
Total Gate Charge	Qg		27.5	42	nC	VDS = 10 V, VGS = 4.5 V, ID = 10 A	2
Turn-On Delay Time	td(on)		30	55	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Rise Time	tr		13	25	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		60	100	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Fall Time	tf		30	55	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω	2
Turn-On Delay Time	td(on)		13	25	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Rise Time	tr		9	18	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Turn-Off Delay Time	td(off)		38	65	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Fall Time	tf		8	16	ns	VDD = 10 V, RL = 2 Ω, ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω	2
Continuous Source-Drain Diode Current	IS			5.1	A	TC = 25 °C	2
Pulse Diode Forward Current	ISM			50	A		2
Body Diode Voltage	VSD		0.71	1.1	V	IS = 2 A	2
Body Diode Reverse Recovery Time	trr		26	50	ns	IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C	2
Body Diode Reverse Recovery Charge	Qrr		16	30	nC	IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C	2

CAD (KiCad official)

Symbol: AP9434GM-HF-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: ap9434gm-hf-vb-etched.step / ap9434gm-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap9434gm-hf-vb.step / ap9434gm-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (9 pp, sha256 6c738c0ae1311e98, retrieved 2026-10-18, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF