# AP8600S

**APEC Advanced Power Elec** · MOSFETs · TO-263

AP8600S from APEC Advanced Power Elec, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at +20 V (absolute maximum). |
| 2 | D | passive | Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 80 V (absolute maximum). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, the reference for VGS and the body-diode forward voltage (VSD 1.3 V max at IS=40 A, VGS=0 V). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 80 | V |  | 1 |
| Gate-Source Voltage | VGS |  |  | 20 | V |  | 1 |
| Pulsed Drain Current | IDM |  |  | 320 | A |  | 1 |
| Drain Current (Chip), VGS @ 10V | ID@TC=25℃ |  |  | 105 | A | VGS @ 10V | 1 |
| Drain Current, VGS @ 10V (package limited) | ID@TC=25℃ |  |  | 80 | A | VGS @ 10V; package limitation current per note 4 | 1 |
| Drain Current, VGS @ 10V | ID@TC=100℃ |  |  | 67 | A | VGS @ 10V | 1 |
| Total Power Dissipation | PD@TC=25℃ |  |  | 104 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 3.125 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c |  |  | 1.2 | ℃/W |  | 1 |
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a |  |  | 40 | ℃/W | PCB mount; surface mounted on 1 in2 copper pad of FR4 board | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 80 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  |  | 5 | mΩ | VGS=10V, ID=40A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 25 | uA | VDS=64V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 300 | nA | VGS= 20V, VDS=0V | 2 |
| Total Gate Charge | Qg |  |  | 118.4 | nC | ID=40A | 2 |
| Input Capacitance | Ciss |  |  | 6560 | pF | VGS=0V | 2 |
| Gate Resistance | Rg |  |  | 3.6 | Ω | f=1.0MHz | 2 |
| Forward On Voltage | VSD |  |  | 1.3 | V | IS=40A, VGS=0V | 2 |

## CAD (KiCad official)

- Symbol: `AP8600S`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `ap8600s-etched.step` / `ap8600s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap8600s.step` / `ap8600s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588903876749897728) (6 pp, sha256 `2e06e8e0091224e0`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ap8600s-datasheet.pdf)