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AP8600S

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APEC Advanced Power Elec MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP8600S

APEC Advanced Power Elec · MOSFETs · TO-263

AP8600S from APEC Advanced Power Elec, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated at +20 V (absolute maximum).
2 D passive Drain terminal of the N-channel MOSFET; the drain-source voltage is rated at 80 V (absolute maximum).
3 S passive Source terminal of the N-channel MOSFET, the reference for VGS and the body-diode forward voltage (VSD 1.3 V max at IS=40 A, VGS=0 V).

Key specifications

Parameter Value
Manufacturer APEC Advanced Power Elec
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS 20 V 1
Pulsed Drain Current IDM 320 A 1
Drain Current (Chip), VGS @ 10V ID@TC=25℃ 105 A VGS @ 10V 1
Drain Current, VGS @ 10V (package limited) ID@TC=25℃ 80 A VGS @ 10V; package limitation current per note 4 1
Drain Current, VGS @ 10V ID@TC=100℃ 67 A VGS @ 10V 1
Total Power Dissipation PD@TC=25℃ 104 W TC=25℃ 1
Total Power Dissipation PD@TA=25℃ 3.125 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-case Rthj-c 1.2 ℃/W 1
Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a 40 ℃/W PCB mount; surface mounted on 1 in2 copper pad of FR4 board 1
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 5 mΩ VGS=10V, ID=40A 2
Gate Threshold Voltage VGS(th) 2 5 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 25 uA VDS=64V, VGS=0V 2
Gate-Source Leakage IGSS 300 nA VGS= 20V, VDS=0V 2
Total Gate Charge Qg 118.4 nC ID=40A 2
Input Capacitance Ciss 6560 pF VGS=0V 2
Gate Resistance Rg 3.6 Ω f=1.0MHz 2
Forward On Voltage VSD 1.3 V IS=40A, VGS=0V 2

CAD (KiCad official)

  • Symbol: AP8600S
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ap8600s-etched.step / ap8600s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap8600s.step / ap8600s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC Advanced Power Elec datasheet (6 pp, sha256 2e06e8e0091224e0, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF