# AP8022HNE-A1

**Wuxi Chipown Micro electronics** · Power Distribution Switches · DIP-8

AP8022HNE-A1 from Wuxi Chipown Micro electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GND | power_in | Ground reference for the controller and the internal MOSFET source; the datasheet gives no separate voltage limit for this pin. |
| 2 | GND | power_in | Ground reference for the controller and the internal MOSFET source; the datasheet gives no separate voltage limit for this pin. |
| 3 | COMP | input | Compensation/feedback pin with an absolute maximum range of -0.3 V to 5 V, used by the PWM control loop (COMP current listed as 1.2 mA). |
| 4 | VDD | power_in | Supply pin with an absolute maximum range of -0.3 V to 40 V, operating at 10 V to 35 V after turn-on, and overvoltage protection at 35 V to 40 V. |
| 5 | NC | unconnected | Marked NC on the package drawing; the datasheet specifies no function or electrical limit for this pin. |
| 6 | SW | output | Drain of the internal 800 V MOSFET, rated -0.3 V to 750 V absolute maximum with BVDSS of 750 V to 800 V and a current limit of 0.6 A to 0.9 A. |
| 7 | SW | output | Drain of the internal 800 V MOSFET, rated -0.3 V to 750 V absolute maximum with BVDSS of 750 V to 800 V and a current limit of 0.6 A to 0.9 A. |
| 8 | SW | output | Drain of the internal 800 V MOSFET, rated -0.3 V to 750 V absolute maximum with BVDSS of 750 V to 800 V and a current limit of 0.6 A to 0.9 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi Chipown Micro electronics |
| Package | DIP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| VDD supply voltage | VDD | -0.3 |  | 40 | V |  | 3 |
| SW pin voltage | SW | -0.3 |  | 750 | V |  | 3 |
| COMP pin voltage | COMP | -0.3 |  | 5 | V |  | 3 |
| Temperature range (label not printed; likely operating junction) |  | -40 |  | 150 | °C |  | 3 |
| Temperature range (label not printed; likely storage) |  | -55 |  | 150 | °C |  | 3 |
| ESD HBM |  | -4 |  | 4 | kV | ESD (1) HBM, ESDA/JEDEC JDS-001-2017 | 3 |
| ESD (2) |  |  |  | 8 | kV |  | 3 |
| Peak pulse current (label not printed) |  |  |  | 3 | A | Tpulse=100us | 3 |
| AC input voltage (application table) |  | 85 |  | 265 | VAC | DIP8 application table: 10W (12V 800mA), 12W (12V 1A) | 2 |
| Drain-source breakdown voltage | BVDSS | 750 | 800 |  | V | ISW =250uA | 3 |
| Off-state drain leakage current | IOFF |  |  | 100 | uA | VSW = 550V | 3 |
| On-state drain-source resistance | RDS(on) |  |  | 10 | Ω | ISW= 400mA, TJ = 25°C | 3 |
| VDD start-up threshold | VSTART | 13 | 14.5 | 16 | V | VCOMP=0V | 3 |
| VDD stop threshold | VSTOP | 7 | 8 | 9 | V | VCOMP=0V | 3 |
| VDD reset voltage | VRST | 5.5 | 6 | 6.5 | V |  | 3 |
| VDD operating range after turn-on | VDD | 10 |  | 35 | V | After turn-on | 3 |
| VDD over-voltage protection | VOVP | 35 | 38 | 40 | V |  | 3 |
| Oscillator frequency | FOSC | 54 | 60 | 66 | kHz | TA = 25°C | 3 |
| Frequency modulation deviation | FD | -6 |  | 6 | kHz |  | 3 |
| Maximum duty cycle | DMAX | 65 | 80 | 90 | % |  | 3 |
| Peak current limit | ILIM | 0.6 | 0.75 | 0.9 | A | TA = 25°C | 3 |
| Thermal shutdown temperature | TSD | 140 | 170 |  | °C |  | 4 |
| Start-up charging current | ICH |  | -1.25 |  | mA | VDRAIN = 105 V, VCOMP = GND, VDD = 12 V | 4 |
| Operating supply current | IDD |  |  | 4 | mA | VDD = 16 V, VCOMP= 0V | 4 |
| Off-state VDD supply current | IDD_OFF |  | 100 | 400 | uA | VDD = 6 V | 4 |
| Modulation frequency | FM |  | 250 |  | Hz |  | 3 |
| COMP pin current | ICOMP |  | 1.2 |  | mA |  | 3 |
| COMP pin resistance | RCOMP |  | 1.15 |  | k |  | 3 |
| UVLO hysteresis | VHYS |  | 6.5 |  | V |  | 3 |
| Leading-edge blanking time | TLEB |  | 650 |  | ns | LEB time | 3 |
| Soft-start time | tSS |  | 7.5 |  | ms |  | 3 |
| Burst-mode drain current | ID_BM |  | 150 |  | mA |  | 3 |
| Thermal shutdown hysteresis | THYST |  | 30 |  | °C |  | 4 |

## CAD (KiCad official)

- Symbol: `AP8022HNE-A1`
- Footprint: `Package_DIP:DIP-8_W7.62mm`
- 3D model: DIP-8 (KiCad packages3D, STEP)
- 3D model files: `ap8022hne-a1-etched.step` / `ap8022hne-a1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap8022hne-a1.step` / `ap8022hne-a1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi Chipown Micro electronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590230774970036224) (8 pp, sha256 `0159a10ef89c1363`, retrieved 2026-10-15, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ap8022hne-a1-datasheet.pdf)