Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

AP8022HNE-A1

Wuxi Chipown Micro electronics · Power Distribution Switches · DIP-8

AP8022HNE-A1 from Wuxi Chipown Micro electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground reference for the controller and the internal MOSFET source; the datasheet gives no separate voltage limit for this pin.
2 GND power_in Ground reference for the controller and the internal MOSFET source; the datasheet gives no separate voltage limit for this pin.
3 COMP input Compensation/feedback pin with an absolute maximum range of -0.3 V to 5 V, used by the PWM control loop (COMP current listed as 1.2 mA).
4 VDD power_in Supply pin with an absolute maximum range of -0.3 V to 40 V, operating at 10 V to 35 V after turn-on, and overvoltage protection at 35 V to 40 V.
5 NC unconnected Marked NC on the package drawing; the datasheet specifies no function or electrical limit for this pin.
6 SW output Drain of the internal 800 V MOSFET, rated -0.3 V to 750 V absolute maximum with BVDSS of 750 V to 800 V and a current limit of 0.6 A to 0.9 A.
7 SW output Drain of the internal 800 V MOSFET, rated -0.3 V to 750 V absolute maximum with BVDSS of 750 V to 800 V and a current limit of 0.6 A to 0.9 A.
8 SW output Drain of the internal 800 V MOSFET, rated -0.3 V to 750 V absolute maximum with BVDSS of 750 V to 800 V and a current limit of 0.6 A to 0.9 A.

Key specifications

Parameter Value
Manufacturer Wuxi Chipown Micro electronics
Package DIP-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD supply voltage VDD -0.3 40 V 3
SW pin voltage SW -0.3 750 V 3
COMP pin voltage COMP -0.3 5 V 3
Temperature range (label not printed; likely operating junction) -40 150 °C 3
Temperature range (label not printed; likely storage) -55 150 °C 3
ESD HBM -4 4 kV ESD (1) HBM, ESDA/JEDEC JDS-001-2017 3
ESD (2) 8 kV 3
Peak pulse current (label not printed) 3 A Tpulse=100us 3
AC input voltage (application table) 85 265 VAC DIP8 application table: 10W (12V 800mA), 12W (12V 1A) 2
Drain-source breakdown voltage BVDSS 750 800 V ISW =250uA 3
Off-state drain leakage current IOFF 100 uA VSW = 550V 3
On-state drain-source resistance RDS(on) 10 Ω ISW= 400mA, TJ = 25°C 3
VDD start-up threshold VSTART 13 14.5 16 V VCOMP=0V 3
VDD stop threshold VSTOP 7 8 9 V VCOMP=0V 3
VDD reset voltage VRST 5.5 6 6.5 V 3
VDD operating range after turn-on VDD 10 35 V After turn-on 3
VDD over-voltage protection VOVP 35 38 40 V 3
Oscillator frequency FOSC 54 60 66 kHz TA = 25°C 3
Frequency modulation deviation FD -6 6 kHz 3
Maximum duty cycle DMAX 65 80 90 % 3
Peak current limit ILIM 0.6 0.75 0.9 A TA = 25°C 3
Thermal shutdown temperature TSD 140 170 °C 4
Start-up charging current ICH -1.25 mA VDRAIN = 105 V, VCOMP = GND, VDD = 12 V 4
Operating supply current IDD 4 mA VDD = 16 V, VCOMP= 0V 4
Off-state VDD supply current IDD_OFF 100 400 uA VDD = 6 V 4
Modulation frequency FM 250 Hz 3
COMP pin current ICOMP 1.2 mA 3
COMP pin resistance RCOMP 1.15 k 3
UVLO hysteresis VHYS 6.5 V 3
Leading-edge blanking time TLEB 650 ns LEB time 3
Soft-start time tSS 7.5 ms 3
Burst-mode drain current ID_BM 150 mA 3
Thermal shutdown hysteresis THYST 30 °C 4

CAD (KiCad official)

  • Symbol: AP8022HNE-A1
  • Footprint: Package_DIP:DIP-8_W7.62mm
  • 3D model: DIP-8 (KiCad packages3D, STEP)
  • 3D model files: ap8022hne-a1-etched.step / ap8022hne-a1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap8022hne-a1.step / ap8022hne-a1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi Chipown Micro electronics datasheet (8 pp, sha256 0159a10ef89c1363, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF