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AP4N2R6H

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APEC(Advanced Power Elec) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP4N2R6H

APEC(Advanced Power Elec) · MOSFETs · TO-252

AP4N2R6H from APEC(Advanced Power Elec), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with a gate threshold of 2 V min to 5 V max at ID=250 uA.
2 D passive Drain (center pin, connected to the exposed tab); drain-source voltage rated 40 V and drain current 75 A package-limited at TC=25 °C.
3 S passive Source; connects to the body diode anode with a forward voltage of 1.2 V max at IS=40 A.

Key specifications

Parameter Value
Manufacturer APEC(Advanced Power Elec)
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V Tj=25°C 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, VGS @ 10V (package limited) ID 75 A TC=25℃, VGS@10V, package limitation 1
Drain Current, VGS @ 10V (silicon limited) ID 45 A Silicon Limited, VGS@10V 1
Pulsed Drain Current IDM 300 A 1
Total Power Dissipation PD 104 W TC=25℃ 1
Total Power Dissipation PD 2 W TA=25℃ 1
Single Pulse Avalanche Energy EAS 150 mJ Starting Tj=25°C, VDD=25V, L=0.1mH, RG=25Ω 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-case Rthj-c 1.2 ℃/W 1
Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W PCB mount, 1 in2 copper pad FR4 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 2.6 mΩ VGS=10V, ID=40A 2
Gate Threshold Voltage VGS(th) 2 5 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=32V, VGS=0V 2
Gate-Source Leakage IGSS -100 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 87 194 nC ID=40A, VDS=32V, VGS=10V 2
Input Capacitance Ciss 5100 8160 pF VGS=0V, VDS=20V, f=1.0MHz 2
Gate Resistance Rg 1.2 2.4 Ω f=1.0MHz 2
Forward On Voltage VSD 1.2 V IS=40A, VGS=0V 2
Forward Transconductance gfs 140 S VDS=5V, ID=40A 2
Gate-Source Charge Qgs 20 nC 2
Gate-Drain Charge Qgd 23 nC 2
Turn-on Delay Time td(on) 15 ns VDS=20V, ID=40A, RG=1.6Ω, VGS=10V 2
Rise Time tr 63 ns 2
Turn-off Delay Time td(off) 36 ns 2
Fall Time tf 12 ns 2
Output Capacitance Coss 720 pF 2
Reverse Transfer Capacitance Crss 360 pF 2
Reverse Recovery Time trr 16 ns IS=40A, VGS=0V, dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 5.4 nC 2

CAD (KiCad official)

  • Symbol: AP4N2R6H
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap4n2r6h-etched.step / ap4n2r6h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4n2r6h.step / ap4n2r6h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC(Advanced Power Elec) datasheet (8 pp, sha256 34c7addc57593817, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF