# AP4606

**ALLPOWER ShenZhen Quan Li Semiconductor** · MOSFETs · SOP-8

AP4606 from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source terminal of the second MOSFET (S2), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage or current limit. |
| 2 | G2 | input | Gate terminal of the second MOSFET (G2), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage limit beyond the device-level VGSS of ±20 V. |
| 3 | S1 | passive | Source terminal of the first MOSFET (S1), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage or current limit. |
| 4 | G1 | input | Gate terminal of the first MOSFET (G1), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage limit beyond the device-level VGSS of ±20 V. |
| 5 | D1 | passive | Drain terminal of the first MOSFET (D1); pins 5 and 6 are both listed as D1 on page 1. |
| 6 | D1 | passive | Drain terminal of the first MOSFET (D1); pins 5 and 6 are both listed as D1 on page 1. |
| 7 | D2 | passive | Drain terminal of the second MOSFET (D2); pins 7 and 8 are both listed as D2 on page 1. |
| 8 | D2 | passive | Drain terminal of the second MOSFET (D2); pins 7 and 8 are both listed as D2 on page 1. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER ShenZhen Quan Li Semiconductor |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N and P channel) | VDSS | -30 |  | 30 | V |  | 2 |
| Gate-Source Voltage (N and P channel) | VGSS | -20 |  | 20 | V |  | 2 |
| N-channel Continuous Drain Current | ID |  |  | 6.9 | A | TA=25℃ | 2 |
| P-channel Continuous Drain Current | ID |  |  | -6 | A | TA=25℃ | 2 |
| N-channel Continuous Drain Current | ID |  |  | 5.8 | A | TA=70℃ | 2 |
| P-channel Continuous Drain Current | ID |  |  | -5 | A | TA=70℃ | 2 |
| Pulsed Drain Current (N and P channel) | IDM | -30 |  | 30 | A | Repetitive rating, pulse width limited by junction temperature | 2 |
| Power Dissipation | PD |  |  | 2 | W | TA=25℃ | 2 |
| Power Dissipation | PD |  |  | 1.44 | W | TA=70℃ | 2 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 2 |
| Maximum Junction-to-Ambient | RθJA |  |  | 62.5 | ℃/W | t≤10s | 2 |
| Maximum Junction-to-Ambient | RθJA |  |  | 110 | ℃/W |  | 2 |
| Maximum Junction-to-Lead | RθJL |  |  | 60 | ℃/W |  | 2 |
| N-channel Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS=0V ID=250μA | 3 |
| N-channel Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=24V VGS=0V | 3 |
| N-channel Zero Gate Voltage Drain Current | IDSS |  |  | 5 | μA | VDS=24V VGS=0V TJ=55℃ | 3 |
| N-channel Gate-Body Leakage Current | IGSS |  |  | 100 | nA | VGS=±20V VDS=0V | 3 |
| N-channel Gate Threshold Voltage | VGS(th) | 1 | 1.9 | 3 | V | VDS=VGS ID=250μA | 3 |
| N-channel On-state Drain Current | ID(on) | 20 |  |  | A | VDS=4.5V VGS=5.0V | 3 |
| N-channel Static Drain-Source On-Resistance | RDS(on) |  | 22.5 | 28 | mΩ | VGS=10V ID=6.9A | 3 |
| N-channel Static Drain-Source On-Resistance | RDS(on) |  | 31.3 | 38 | mΩ | VGS=10V ID=6.9A TJ=125℃ | 3 |
| N-channel Static Drain-Source On-Resistance | RDS(on) |  | 34.5 | 42 | mΩ | VGS=4.5V ID=5.0A | 3 |
| N-channel Forward Transconductance | gFS | 10 | 15.4 |  | S | VDS=5.0V ID=6.9A | 3 |
| N-channel Diode Forward Voltage | VSD |  | 0.76 | 1 | V | VGS=0V IS=1.0A | 3 |
| N-channel Maximum Body-Diode Continuous Current | IS |  |  | 3 | A |  | 3 |
| P-channel Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | VGS=0V ID=-250μA | 6 |
| P-channel Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-24V VGS=0V | 6 |
| P-channel Zero Gate Voltage Drain Current | IDSS |  |  | -5 | μA | VDS=-24V VGS=0V TJ=55℃ | 6 |
| P-channel Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V VDS=0V | 6 |
| P-channel Gate Threshold Voltage | VGS(th) | -1.2 | -2 | -2.4 | V | VDS=VGS ID=-250μA | 6 |
| P-channel On-state Drain Current | ID(on) | 30 |  |  | A | VDS=-4.5V VGS=-5.0V | 6 |
| P-channel Static Drain-Source On-Resistance | RDS(on) |  | 28 | 35 | mΩ | VGS=-10V ID=-6.0A | 6 |
| P-channel Static Drain-Source On-Resistance | RDS(on) |  | 37 | 45 | mΩ | VGS=-10V ID=-6.0A TJ=125℃ | 6 |
| P-channel Static Drain-Source On-Resistance | RDS(on) |  | 44 | 58 | mΩ | VGS=-4.5V ID=-5.0A | 6 |
| P-channel Diode Forward Voltage | VSD |  | -0.76 | -1 | V | VGS=0V IS=-1.0A | 6 |
| P-channel Maximum Body-Diode Continuous Current | IS |  |  | -4.2 | A |  | 6 |

## CAD (KiCad official)

- Symbol: `AP4606`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `ap4606-etched.step` / `ap4606-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap4606.step` / `ap4606.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ALLPOWER ShenZhen Quan Li Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884286300688384) (11 pp, sha256 `b907923427cd07bb`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ap4606-datasheet.pdf)