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AP4606

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ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP4606

ALLPOWER ShenZhen Quan Li Semiconductor · MOSFETs · SOP-8

AP4606 from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source terminal of the second MOSFET (S2), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage or current limit.
2 G2 input Gate terminal of the second MOSFET (G2), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage limit beyond the device-level VGSS of ±20 V.
3 S1 passive Source terminal of the first MOSFET (S1), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage or current limit.
4 G1 input Gate terminal of the first MOSFET (G1), as listed in the pinning table on page 1; the datasheet gives no pin-specific voltage limit beyond the device-level VGSS of ±20 V.
5 D1 passive Drain terminal of the first MOSFET (D1); pins 5 and 6 are both listed as D1 on page 1.
6 D1 passive Drain terminal of the first MOSFET (D1); pins 5 and 6 are both listed as D1 on page 1.
7 D2 passive Drain terminal of the second MOSFET (D2); pins 7 and 8 are both listed as D2 on page 1.
8 D2 passive Drain terminal of the second MOSFET (D2); pins 7 and 8 are both listed as D2 on page 1.

Key specifications

Parameter Value
Manufacturer ALLPOWER ShenZhen Quan Li Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N and P channel) VDSS -30 30 V 2
Gate-Source Voltage (N and P channel) VGSS -20 20 V 2
N-channel Continuous Drain Current ID 6.9 A TA=25℃ 2
P-channel Continuous Drain Current ID -6 A TA=25℃ 2
N-channel Continuous Drain Current ID 5.8 A TA=70℃ 2
P-channel Continuous Drain Current ID -5 A TA=70℃ 2
Pulsed Drain Current (N and P channel) IDM -30 30 A Repetitive rating, pulse width limited by junction temperature 2
Power Dissipation PD 2 W TA=25℃ 2
Power Dissipation PD 1.44 W TA=70℃ 2
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Maximum Junction-to-Ambient RθJA 62.5 ℃/W t≤10s 2
Maximum Junction-to-Ambient RθJA 110 ℃/W 2
Maximum Junction-to-Lead RθJL 60 ℃/W 2
N-channel Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V ID=250μA 3
N-channel Zero Gate Voltage Drain Current IDSS 1 μA VDS=24V VGS=0V 3
N-channel Zero Gate Voltage Drain Current IDSS 5 μA VDS=24V VGS=0V TJ=55℃ 3
N-channel Gate-Body Leakage Current IGSS 100 nA VGS=±20V VDS=0V 3
N-channel Gate Threshold Voltage VGS(th) 1 1.9 3 V VDS=VGS ID=250μA 3
N-channel On-state Drain Current ID(on) 20 A VDS=4.5V VGS=5.0V 3
N-channel Static Drain-Source On-Resistance RDS(on) 22.5 28 mΩ VGS=10V ID=6.9A 3
N-channel Static Drain-Source On-Resistance RDS(on) 31.3 38 mΩ VGS=10V ID=6.9A TJ=125℃ 3
N-channel Static Drain-Source On-Resistance RDS(on) 34.5 42 mΩ VGS=4.5V ID=5.0A 3
N-channel Forward Transconductance gFS 10 15.4 S VDS=5.0V ID=6.9A 3
N-channel Diode Forward Voltage VSD 0.76 1 V VGS=0V IS=1.0A 3
N-channel Maximum Body-Diode Continuous Current IS 3 A 3
P-channel Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 6
P-channel Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V VGS=0V 6
P-channel Zero Gate Voltage Drain Current IDSS -5 μA VDS=-24V VGS=0V TJ=55℃ 6
P-channel Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V VDS=0V 6
P-channel Gate Threshold Voltage VGS(th) -1.2 -2 -2.4 V VDS=VGS ID=-250μA 6
P-channel On-state Drain Current ID(on) 30 A VDS=-4.5V VGS=-5.0V 6
P-channel Static Drain-Source On-Resistance RDS(on) 28 35 mΩ VGS=-10V ID=-6.0A 6
P-channel Static Drain-Source On-Resistance RDS(on) 37 45 mΩ VGS=-10V ID=-6.0A TJ=125℃ 6
P-channel Static Drain-Source On-Resistance RDS(on) 44 58 mΩ VGS=-4.5V ID=-5.0A 6
P-channel Diode Forward Voltage VSD -0.76 -1 V VGS=0V IS=-1.0A 6
P-channel Maximum Body-Diode Continuous Current IS -4.2 A 6

CAD (KiCad official)

  • Symbol: AP4606
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ap4606-etched.step / ap4606-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4606.step / ap4606.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALLPOWER ShenZhen Quan Li Semiconductor datasheet (11 pp, sha256 b907923427cd07bb, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF