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AP4435GM

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APEC Advanced Power Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP4435GM

APEC Advanced Power Elec · MOSFETs · SO-8

AP4435GM from APEC Advanced Power Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel enhancement-mode MOSFET, which is rated for a drain-source voltage (BVDSS) of -30 V.
2 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are to be connected together.
3 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are all source and are to be connected together.
4 G input Gate terminal of the MOSFET; the datasheet prints a gate-source rating of +20 V and specifies RDS(ON) at VGS = -4.5 V and -10 V.
5 D passive Drain terminal of the P-channel MOSFET; pins 5 through 8 are all drain and are to be connected together.
6 D passive Drain terminal of the P-channel MOSFET; pins 5 through 8 are all drain and are to be connected together.
7 D passive Drain terminal of the P-channel MOSFET; pins 5 through 8 are all drain and are to be connected together.
8 D passive Drain terminal of the P-channel MOSFET; pins 5 through 8 are all drain and are to be connected together.

Key specifications

Parameter Value
Manufacturer APEC Advanced Power Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID -9 A TA=25℃ 1
Continuous Drain Current ID -7.3 A TA=70℃ 1
Pulsed Drain Current IDM -50 A Pulse width limited by max. junction temperature 1
Total Power Dissipation PD 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 50 ℃/W Surface mounted on 1 in2 copper pad of FR4 board, t<10sec 1
Maximum Thermal Resistance, Junction-ambient (min. copper pad) Rthj-a 125 ℃/W Mounted on min. copper pad 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 20 mΩ VGS=-10V, ID=-7A 2
Static Drain-Source On-Resistance RDS(ON) 32 mΩ VGS=-4.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-30V, VGS=0V 2
Drain-Source Leakage Current (Tj=70℃) -25 uA VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V 2
Total Gate Charge Qg 18 29 nC ID=-7A 2
Input Capacitance Ciss 1175 1690 pF VGS=0V 2
Forward On Voltage VSD -1.2 V IS=-2.1A, VGS=0V 2

CAD (KiCad official)

  • Symbol: AP4435GM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ap4435gm-etched.step / ap4435gm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4435gm.step / ap4435gm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC Advanced Power Elec datasheet (5 pp, sha256 72e6e89407010f76, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF