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AP3134N5
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ALLPOWER(ShenZhen Quan Li Semiconductor) MOSFETs, SOT-523. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP3134N5
ALLPOWER(ShenZhen Quan Li Semiconductor) · MOSFETs · SOT-523
AP3134N5 from ALLPOWER(ShenZhen Quan Li Semiconductor), in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V (absolute maximum). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, with a diode forward current rating IS of 1.2 A maximum. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 20 V and a continuous drain current ID of 1.2 A at Tc = 25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER(ShenZhen Quan Li Semiconductor) |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Gate threshold voltage | VGS(th) | 0.3 | 0.65 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =20V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -10 | 10 | µA | VGS =±10V,VDS = 0V | 2 | |
| Drain-source on-resistance | RDS(on) | 90 | 110 | mΩ | VGS =4.5V, ID =1.2A | 2 | |
| Drain-source on-resistance | RDS(on) | 115 | 150 | mΩ | VGS =2.5V, ID =0.8A | 2 | |
| Drain-source on-resistance | RDS(on) | 165 | 215 | mΩ | VGS =1.8V, ID =0.3A | 2 | |
| Diode forward voltage | VDS | 1.3 | V | VGS =0V, IS=0.5A | 2 | ||
| Diode forward current | IS | 1.2 | A | 2 | |||
| Drain-Source Voltage | VDS | 20 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 1.2 | A | Tc =25℃ | 1 | ||
| Continuous Drain Current | ID | 0.7 | A | Tc =70℃ | 1 | ||
| Pulsed Drain Current | IDM | 1.8 | A | 1 | |||
| Power Dissipation | PD | 0.15 | W | 1 | |||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 833 | ℃/W | Footnote (4) | 1 | ||
| Input Capacitance | Ciss | 79 | pF | VDS =16V, VGS =0V, f =1MHz | 2 | ||
| Output Capacitance | Coss | 13 | pF | VDS =16V, VGS =0V, f =1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 9 | pF | VDS =16V, VGS =0V, f =1MHz | 2 | ||
| Turn-on delay time | td(on) | 6.7 | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 | ||
| Turn-on rise time | tr | 4.8 | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 | ||
| Turn-off delay time | td(off) | 17.3 | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 | ||
| Turn-off fall time | tf | 7.4 | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 | ||
| Total Gate Charge | Qg | 1.6 | nC | VDS=15V, ID=1A, VGS=4.5V | 2 | ||
| Gate-Source Charge | Qgs | 0.2 | nC | VDS=15V, ID=1A, VGS=4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 0.2 | nC | VDS=15V, ID=1A, VGS=4.5V | 2 |
CAD (KiCad official)
- Symbol:
AP3134N5 - Footprint:
Package_TO_SOT_SMD:SOT-523 - 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
ap3134n5-etched.step/ap3134n5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap3134n5.step/ap3134n5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALLPOWER(ShenZhen Quan Li Semiconductor) datasheet (4 pp, sha256
0b4b6427840997bc, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP3134N5
**ALLPOWER(ShenZhen Quan Li Semiconductor)** · MOSFETs · SOT-523
AP3134N5 from ALLPOWER(ShenZhen Quan Li Semiconductor), in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V (absolute maximum). |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET, with a diode forward current rating IS of 1.2 A maximum. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 20 V and a continuous drain current ID of 1.2 A at Tc = 25℃. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER(ShenZhen Quan Li Semiconductor) |
| Package | SOT-523 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | | | V | VGS = 0V, ID =250µA | 2 |
| Gate threshold voltage | VGS(th) | 0.3 | 0.65 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS =20V, VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -10 | | 10 | µA | VGS =±10V,VDS = 0V | 2 |
| Drain-source on-resistance | RDS(on) | | 90 | 110 | mΩ | VGS =4.5V, ID =1.2A | 2 |
| Drain-source on-resistance | RDS(on) | | 115 | 150 | mΩ | VGS =2.5V, ID =0.8A | 2 |
| Drain-source on-resistance | RDS(on) | | 165 | 215 | mΩ | VGS =1.8V, ID =0.3A | 2 |
| Diode forward voltage | VDS | | | 1.3 | V | VGS =0V, IS=0.5A | 2 |
| Diode forward current | IS | | | 1.2 | A | | 2 |
| Drain-Source Voltage | VDS | | | 20 | V | Ta=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | | 1 |
| Continuous Drain Current | ID | | | 1.2 | A | Tc =25℃ | 1 |
| Continuous Drain Current | ID | | | 0.7 | A | Tc =70℃ | 1 |
| Pulsed Drain Current | IDM | | | 1.8 | A | | 1 |
| Power Dissipation | PD | | | 0.15 | W | | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance from Junction to Ambient | RθJA | | | 833 | ℃/W | Footnote (4) | 1 |
| Input Capacitance | Ciss | | 79 | | pF | VDS =16V, VGS =0V, f =1MHz | 2 |
| Output Capacitance | Coss | | 13 | | pF | VDS =16V, VGS =0V, f =1MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 9 | | pF | VDS =16V, VGS =0V, f =1MHz | 2 |
| Turn-on delay time | td(on) | | 6.7 | | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 |
| Turn-on rise time | tr | | 4.8 | | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 |
| Turn-off delay time | td(off) | | 17.3 | | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 |
| Turn-off fall time | tf | | 7.4 | | ns | VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω | 2 |
| Total Gate Charge | Qg | | 1.6 | | nC | VDS=15V, ID=1A, VGS=4.5V | 2 |
| Gate-Source Charge | Qgs | | 0.2 | | nC | VDS=15V, ID=1A, VGS=4.5V | 2 |
| Gate-Drain Charge | Qgd | | 0.2 | | nC | VDS=15V, ID=1A, VGS=4.5V | 2 |
## CAD (KiCad official)
- Symbol: `AP3134N5`
- Footprint: `Package_TO_SOT_SMD:SOT-523`
- 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `ap3134n5-etched.step` / `ap3134n5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap3134n5.step` / `ap3134n5.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ALLPOWER(ShenZhen Quan Li Semiconductor) datasheet](docs/ap3134n5-datasheet.pdf) (4 pp, sha256 `0b4b6427840997bc`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap3134n5-datasheet.pdf)