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AP3134N5

ALLPOWER(ShenZhen Quan Li Semiconductor) · MOSFETs · SOT-523

AP3134N5 from ALLPOWER(ShenZhen Quan Li Semiconductor), in a SOT-523. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal of the N-channel MOSFET, rated for a gate-source voltage VGS of ±12 V (absolute maximum).
2 SOURCE passive Source terminal of the N-channel MOSFET, with a diode forward current rating IS of 1.2 A maximum.
3 DRAIN passive Drain terminal of the N-channel MOSFET, rated for a drain-source voltage VDS of 20 V and a continuous drain current ID of 1.2 A at Tc = 25℃.

Key specifications

Parameter Value
Manufacturer ALLPOWER(ShenZhen Quan Li Semiconductor)
Package SOT-523
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID =250µA 2
Gate threshold voltage VGS(th) 0.3 0.65 1 V VDS =VGS, ID =250µA 2
Zero gate voltage drain current IDSS 1 µA VDS =20V, VGS = 0V 2
Gate-body leakage current IGSS -10 10 µA VGS =±10V,VDS = 0V 2
Drain-source on-resistance RDS(on) 90 110 mΩ VGS =4.5V, ID =1.2A 2
Drain-source on-resistance RDS(on) 115 150 mΩ VGS =2.5V, ID =0.8A 2
Drain-source on-resistance RDS(on) 165 215 mΩ VGS =1.8V, ID =0.3A 2
Diode forward voltage VDS 1.3 V VGS =0V, IS=0.5A 2
Diode forward current IS 1.2 A 2
Drain-Source Voltage VDS 20 V Ta=25℃ 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 1.2 A Tc =25℃ 1
Continuous Drain Current ID 0.7 A Tc =70℃ 1
Pulsed Drain Current IDM 1.8 A 1
Power Dissipation PD 0.15 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 833 ℃/W Footnote (4) 1
Input Capacitance Ciss 79 pF VDS =16V, VGS =0V, f =1MHz 2
Output Capacitance Coss 13 pF VDS =16V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 9 pF VDS =16V, VGS =0V, f =1MHz 2
Turn-on delay time td(on) 6.7 ns VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω 2
Turn-on rise time tr 4.8 ns VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω 2
Turn-off delay time td(off) 17.3 ns VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω 2
Turn-off fall time tf 7.4 ns VDD=10V, ID=0.5A, VGS=4.5V, RG=10Ω 2
Total Gate Charge Qg 1.6 nC VDS=15V, ID=1A, VGS=4.5V 2
Gate-Source Charge Qgs 0.2 nC VDS=15V, ID=1A, VGS=4.5V 2
Gate-Drain Charge Qgd 0.2 nC VDS=15V, ID=1A, VGS=4.5V 2

CAD (KiCad official)

  • Symbol: AP3134N5
  • Footprint: Package_TO_SOT_SMD:SOT-523
  • 3D model: SOT-523, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.8 mm nominal SOT-523 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: ap3134n5-etched.step / ap3134n5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap3134n5.step / ap3134n5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALLPOWER(ShenZhen Quan Li Semiconductor) datasheet (4 pp, sha256 0b4b6427840997bc, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF