# AP2318A

**ALLPOWER ShenZhen Quan Li Semiconductor** · MOSFETs · SOT-23-3

AP2318A from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±12 V maximum and a threshold of 0.45 V min to 1.0 V max at ID=250 µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with continuous diode forward current IS of 6 A maximum. |
| 3 | D | passive | Drain terminal; VDS rated 20 V maximum, continuous drain current 6 A at Tc=25 °C and pulsed 24 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER ShenZhen Quan Li Semiconductor |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID =250µA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS =20V, VGS = 0V | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS =±12V, VDS = 0V | 2 |
| Gate threshold voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) |  | 10 | 13 | mΩ | VGS =4.5V, ID =8A | 2 |
| Drain-source on-resistance | RDS(on) |  | 12 | 16 | mΩ | VGS =2.5V, ID =5A | 2 |
| Gate resistance | RG | 0.5 |  | 4.8 | Ω | f=1.0MHz | 2 |
| Turn-on delay time | td(on) |  | 8 | 16 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 |
| Turn-on rise time | tr |  | 15 | 30 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 |
| Turn-off delay time | td(off) |  | 33 | 66 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 |
| Turn-off fall time | tf |  | 13 | 26 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 |
| Diode forward voltage | VSD |  | 0.75 | 1.2 | V | TJ=25℃, VGS =0V, IS=4A | 2 |
| Diode forward current | IS |  |  | 6 | A | TC=25℃ | 2 |
| Drain-source voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-source voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous drain current | ID |  |  | 6 | A | Tc=25℃ | 1 |
| Continuous drain current | ID |  |  | 3.6 | A | Tc=100℃ | 1 |
| Pulsed drain current | IDM |  |  | 24 | A |  | 1 |
| Drain power dissipation | PD |  |  | 1.25 | W |  | 1 |
| Thermal resistance from junction to ambient | RθJA |  |  | 100 | ℃/W |  | 1 |
| Junction temperature | TJ | -55 |  | 150 | ℃ |  | 1 |
| Storage temperature | TSTG | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `AP2318A`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files: `ap2318a-etched.step` / `ap2318a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap2318a.step` / `ap2318a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ALLPOWER ShenZhen Quan Li Semiconductor datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904302203047936) (6 pp, sha256 `c36a296736836b73`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ap2318a-datasheet.pdf)