component
AP2318A
Public Made by Adomby adom
ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAP2318A
ALLPOWER ShenZhen Quan Li Semiconductor · MOSFETs · SOT-23-3
AP2318A from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±12 V maximum and a threshold of 0.45 V min to 1.0 V max at ID=250 µA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, with continuous diode forward current IS of 6 A maximum. |
| 3 | D | passive | Drain terminal; VDS rated 20 V maximum, continuous drain current 6 A at Tc=25 °C and pulsed 24 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ALLPOWER ShenZhen Quan Li Semiconductor |
| Package | SOT-23-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =20V, VGS = 0V | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS =±12V, VDS = 0V | 2 | |
| Gate threshold voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-resistance | RDS(on) | 10 | 13 | mΩ | VGS =4.5V, ID =8A | 2 | |
| Drain-source on-resistance | RDS(on) | 12 | 16 | mΩ | VGS =2.5V, ID =5A | 2 | |
| Gate resistance | RG | 0.5 | 4.8 | Ω | f=1.0MHz | 2 | |
| Turn-on delay time | td(on) | 8 | 16 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 | |
| Turn-on rise time | tr | 15 | 30 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 | |
| Turn-off delay time | td(off) | 33 | 66 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 | |
| Turn-off fall time | tf | 13 | 26 | nS | VDD=10V, ID=4A, RG=1Ω, VGS=5V | 2 | |
| Diode forward voltage | VSD | 0.75 | 1.2 | V | TJ=25℃, VGS =0V, IS=4A | 2 | |
| Diode forward current | IS | 6 | A | TC=25℃ | 2 | ||
| Drain-source voltage | VDS | 20 | V | 1 | |||
| Gate-source voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous drain current | ID | 6 | A | Tc=25℃ | 1 | ||
| Continuous drain current | ID | 3.6 | A | Tc=100℃ | 1 | ||
| Pulsed drain current | IDM | 24 | A | 1 | |||
| Drain power dissipation | PD | 1.25 | W | 1 | |||
| Thermal resistance from junction to ambient | RθJA | 100 | ℃/W | 1 | |||
| Junction temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage temperature | TSTG | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
AP2318A - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3 (KiCad packages3D, STEP)
- 3D model files:
ap2318a-etched.step/ap2318a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap2318a.step/ap2318a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ALLPOWER ShenZhen Quan Li Semiconductor datasheet (6 pp, sha256
c36a296736836b73, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).